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<p>A groundbreaking ultrasonication-assisted synthesis technique has been devised to fabricate a manganese(II)-based metallogel, utilizing citric acid as a low molecular weight gelator (LMWG) dissolved in dimethylformamide (DMF). Extensive rheological studies confirm its exceptional mechanical stability. The metallogel showcases a distinctive sedimentary rock-like morphology, characterized through field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray (EDX) elemental mapping, affirming its chemical composition. Remarkably, its supramolecular structure exhibits notable electrical conductivity, evident when integrated into metal–semiconductor (MS) junction electronic devices, functioning effectively as a Schottky barrier diode. Notably, the synthesis method, notably ultrasonication, significantly influences metallogel formation, potentially impacting its electrical properties. The distinctive FESEM morphology likely underlies its semiconductive behavior, indicating its promise as a pioneering material for electronic applications. These findings herald new frontiers in material science, particularly in metallogel-based electronic components, fostering prospects for further research and technological advancements in this domain.</p> Graphical Abstract <p></p>

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Fabrication of a supramolecular metallogel from citric acid and Mn(II) ions for improved Schottky barrier diode performance in semiconductor devices

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月13日

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  • Subhendu Dhibar,
  • Aiswarya Mohan,
  • Saranya Babu,
  • Subham Bhattacharjee,
  • Sangita Some,
  • Soumya Jyoti Ray,
  • Sanjay Roy,
  • Timothy O. Ajiboye,
  • Padmanabhan Predeep,
  • Bidyut Saha

摘要

A groundbreaking ultrasonication-assisted synthesis technique has been devised to fabricate a manganese(II)-based metallogel, utilizing citric acid as a low molecular weight gelator (LMWG) dissolved in dimethylformamide (DMF). Extensive rheological studies confirm its exceptional mechanical stability. The metallogel showcases a distinctive sedimentary rock-like morphology, characterized through field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray (EDX) elemental mapping, affirming its chemical composition. Remarkably, its supramolecular structure exhibits notable electrical conductivity, evident when integrated into metal–semiconductor (MS) junction electronic devices, functioning effectively as a Schottky barrier diode. Notably, the synthesis method, notably ultrasonication, significantly influences metallogel formation, potentially impacting its electrical properties. The distinctive FESEM morphology likely underlies its semiconductive behavior, indicating its promise as a pioneering material for electronic applications. These findings herald new frontiers in material science, particularly in metallogel-based electronic components, fostering prospects for further research and technological advancements in this domain.

Graphical Abstract