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<p>Zinc sulfide (ZnS), a wide band gap II-VI semiconductor, has become a promising option due to its excellent transparency, chemical stability, and environmentally friendly nature. A comprehensive study of RF sputter-deposited ZnS thin films is presented, utilizing a wide range of characterization techniques. Negative substrate bias voltage and substrate temperature have been used as the variable process parameters. In the XRD patterns, the ZnS peaks are seen at (111), (220), and (311). Cubic ZnS structure is seen in FTIR peaks around 610.60&#xa0;cm⁻¹. The elemental composition and chemical states in the ZnS thin film are confirmed by XPS analysis. The crystalline nature and nanostructured shape of the ZnS thin film are revealed by TEM results. SEM and EDS analysis showed uniform surface morphology and chemical composition, respectively, while a Raman shift at 350&#xa0;cm⁻¹ corresponds to phonon modes of ZnS. UV-visible spectroscopy optimizes optical properties for better light absorption with a bandgap of 3.5&#xa0;eV. Hall measurements provide electrical data, allowing fine-tuning of carrier mobility and resistivity. The results show that thinner films (less than 100&#xa0;nm) have higher optical transmittance, making them suitable for solar cell applications. In contrast, thicker films demonstrated better crystallinity and conductivity, which are important for optoelectronic and dielectric applications. The major accomplishment of the experiments shows controlled variation of substrate temperature and bias voltage influences the crystallinity, electrical resistivity, and optical transparency of ZnS thin films. Successful uniform RF sputtering and film stability indicate ZnS as an environmentally friendly alternative to CdS-based thin films.</p>

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Comprehensive analysis of RF sputtered ZnS thin films towards optoelectronic applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月15日

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  • Sutapa Badyakar,
  • G. Mohan Rao,
  • Chandasree Das

摘要

Zinc sulfide (ZnS), a wide band gap II-VI semiconductor, has become a promising option due to its excellent transparency, chemical stability, and environmentally friendly nature. A comprehensive study of RF sputter-deposited ZnS thin films is presented, utilizing a wide range of characterization techniques. Negative substrate bias voltage and substrate temperature have been used as the variable process parameters. In the XRD patterns, the ZnS peaks are seen at (111), (220), and (311). Cubic ZnS structure is seen in FTIR peaks around 610.60 cm⁻¹. The elemental composition and chemical states in the ZnS thin film are confirmed by XPS analysis. The crystalline nature and nanostructured shape of the ZnS thin film are revealed by TEM results. SEM and EDS analysis showed uniform surface morphology and chemical composition, respectively, while a Raman shift at 350 cm⁻¹ corresponds to phonon modes of ZnS. UV-visible spectroscopy optimizes optical properties for better light absorption with a bandgap of 3.5 eV. Hall measurements provide electrical data, allowing fine-tuning of carrier mobility and resistivity. The results show that thinner films (less than 100 nm) have higher optical transmittance, making them suitable for solar cell applications. In contrast, thicker films demonstrated better crystallinity and conductivity, which are important for optoelectronic and dielectric applications. The major accomplishment of the experiments shows controlled variation of substrate temperature and bias voltage influences the crystallinity, electrical resistivity, and optical transparency of ZnS thin films. Successful uniform RF sputtering and film stability indicate ZnS as an environmentally friendly alternative to CdS-based thin films.