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<p>This work reports an experimental investigation into how commercial monocrystalline silicon (Mono-Si) solar cells degrade when subjected to concurrent thermal and electrical stress. Under reverse-bias stress implemented as current injections from 5 to 40&#xa0;mA for up to 40&#xa0;min, we observe a stepwise rise in leakage current (up to 65%) accompanied by an ~ 45% drop in shunt resistance, evidencing junction-level damage and the onset of hot spots. Complementary dark I–V measurements between 298 and 348&#xa0;K indicate thermally activated transport, from which an effective barrier height (<i>Φb</i>,<i> eff</i>) of ~ 0.326&#xa0;eV is extracted. Impedance analyses (Nyquist and Bode) reveal non-ideal charge transport consistent with distributed defect states; the data yield an activation energy Ea of 0.060&#xa0;eV and a declining Rdc with temperature. Furthermore, capacitance–voltage profiling and 1/C²–V evaluation show temperature-driven increases in donor density (Nd), in line with shallow-level dopant activation. Taken together, these results point to recombination-enhanced pathways, trap-state activation, and interfacial instabilities as the principal drivers of long-term performance loss. Beyond explaining the underlying physics, the findings offer a basis for improving thermal management and system reliability in photovoltaic deployments. We also advance a unified, multi-modal diagnostic workflow that integrates DC and AC characterization to directly link transport behavior with temperature-induced degradation mechanisms.</p>

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Analysis of monocrystalline silicon solar cell performance under thermal stress, reverse bias stress, and AC impedance spectroscopy

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月18日

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  • Fuad Alhaj Omar

摘要

This work reports an experimental investigation into how commercial monocrystalline silicon (Mono-Si) solar cells degrade when subjected to concurrent thermal and electrical stress. Under reverse-bias stress implemented as current injections from 5 to 40 mA for up to 40 min, we observe a stepwise rise in leakage current (up to 65%) accompanied by an ~ 45% drop in shunt resistance, evidencing junction-level damage and the onset of hot spots. Complementary dark I–V measurements between 298 and 348 K indicate thermally activated transport, from which an effective barrier height (Φb, eff) of ~ 0.326 eV is extracted. Impedance analyses (Nyquist and Bode) reveal non-ideal charge transport consistent with distributed defect states; the data yield an activation energy Ea of 0.060 eV and a declining Rdc with temperature. Furthermore, capacitance–voltage profiling and 1/C²–V evaluation show temperature-driven increases in donor density (Nd), in line with shallow-level dopant activation. Taken together, these results point to recombination-enhanced pathways, trap-state activation, and interfacial instabilities as the principal drivers of long-term performance loss. Beyond explaining the underlying physics, the findings offer a basis for improving thermal management and system reliability in photovoltaic deployments. We also advance a unified, multi-modal diagnostic workflow that integrates DC and AC characterization to directly link transport behavior with temperature-induced degradation mechanisms.