<p>This study highlights a purpose-driven design and optimization of a C<sub>2</sub>N-based solar cell structure using the SCAPS-1D solar cell simulator. We investigate the performance characteristics of an ITO/MZO/C<sub>2</sub>N/CZT heterojunction stack, focusing on optimizing the Magnesium Zinc Oxide (MZO) Electron Transport Layer (ETL), the C<sub>2</sub>N absorber, and the CZT Hole Transport Layer/Back Surface Field (HTL/BSF). By systematically varying critical parameters such as ETL thickness, absorber thickness, and doping densities, along with interface characteristics and operating temperature, we engineer a device that achieves a peak simulated power conversion efficiency (PCE) of 32.20%. The optimized configuration yields impressive performance metrics, including V<sub>oc</sub> = 1.605&#xa0;V, J<sub>sc</sub> = 22.927&#xa0;mA/cm², and FF = 87.48%. These results highlight the significant impact of meticulous layer engineering, especially with regard to the ETL and BSF, on achieving ultra-high efficiencies in C<sub>2</sub>N photovoltaics.</p>

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Optimizing the ITO/MZO/C₂N/CZT heterojunction: a pathway to high-performance photovoltaics

  • Pratap Kumar Dakua,
  • Subba Rao Polamuri,
  • P. Meena,
  • P. Purushottam,
  • Shaik Nazeera Begum,
  • S. Elisha Rani,
  • Kumar Neupane

摘要

This study highlights a purpose-driven design and optimization of a C2N-based solar cell structure using the SCAPS-1D solar cell simulator. We investigate the performance characteristics of an ITO/MZO/C2N/CZT heterojunction stack, focusing on optimizing the Magnesium Zinc Oxide (MZO) Electron Transport Layer (ETL), the C2N absorber, and the CZT Hole Transport Layer/Back Surface Field (HTL/BSF). By systematically varying critical parameters such as ETL thickness, absorber thickness, and doping densities, along with interface characteristics and operating temperature, we engineer a device that achieves a peak simulated power conversion efficiency (PCE) of 32.20%. The optimized configuration yields impressive performance metrics, including Voc = 1.605 V, Jsc = 22.927 mA/cm², and FF = 87.48%. These results highlight the significant impact of meticulous layer engineering, especially with regard to the ETL and BSF, on achieving ultra-high efficiencies in C2N photovoltaics.