In this article Part 2 of this series of articles, the methodology proposed in Part 1, namely, the fitting to a polynomial of the current minus the short-circuit current, i.e., \(I-{I}_{sc}\) , to calculate the Co-Content function \(\left(CC\left(V,I\right)\right)\) and extract the five solar cell parameters, i.e., the shunt resistance \(\left({R}_{sh}\right)\) , the series resistance \(\left({R}_{s}\right)\) , the ideality factor \(\left(n\right)\) , the light current \(\left({I}_{lig}\right)\) , and the saturation current \(\left({I}_{sat}\right)\) , (within the one-diode solar cell model), is implemented on reported Current–Voltage (IV) curves found in the literature, both for laboratory made solar cells, as for and single-crystalline silicon (x-Si), multi-crystalline silicon (m-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), amorphous silicon (a-Si) tandem and triple-junction, amorphous silicon/crystalline silicon, heterojunction with intrinsic thin-layer (HIT), and amorphous silicon/microcrystalline silicon photovoltaic modules.
