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<p>Defects in nanomaterials are always considered as instability factors for device performance. However, we have discovered a positive role for the defects in monolayer molybdenum disulfide (MoS<sub>2</sub>) lattice in the registration and transformation of useful bio and chemical signals. In this study, we developed a liquid-gated MoS<sub>2</sub> field-effect transistor (FET) employing a chemically synthesized MoS<sub>2</sub> film that serves dual functions as both the active channel and pH-sensitive layer. Through defect engineering, we activated the inert basal plane of MoS<sub>2</sub>, significantly enhancing the chemisorption of hydrogen ions (H⁺) at defect sites and improving specific responses to pH variations. The optimized defect-engineered, liquid-gated MoS<sub>2</sub> FET demonstrates a low subthreshold swing (<i>SS</i>) of 70&#xa0;mV/dec in electrolyte solution, approaching the theoretical limit, with a record-high current sensitivity of 534.8%/pH in the subthreshold region due to the smaller <i>SS</i>. Remarkably, the device demonstrates a minimal hysteresis width of 5 nA after two cycling tests. Combined with theoretical calculations, this study reveals the crucial role of defect sites in MoS<sub>2</sub> for the adsorption of H<sup>+</sup> ions. The findings provide key insights for achieving high-performance pH sensors and offer important guidelines for maintaining the operational stability of FET biosensors in complex systems.</p>

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Defect-engineered liquid-gated MoS2 field-effect transistor for pH sensing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月18日

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  • Chao Wu,
  • Yunong Xie,
  • Quankun Luo,
  • Taotao Li,
  • Yunfei Gao,
  • Hui Li,
  • Jianping Shi,
  • Maguang Zhu,
  • Mengmeng Xiao

摘要

Defects in nanomaterials are always considered as instability factors for device performance. However, we have discovered a positive role for the defects in monolayer molybdenum disulfide (MoS2) lattice in the registration and transformation of useful bio and chemical signals. In this study, we developed a liquid-gated MoS2 field-effect transistor (FET) employing a chemically synthesized MoS2 film that serves dual functions as both the active channel and pH-sensitive layer. Through defect engineering, we activated the inert basal plane of MoS2, significantly enhancing the chemisorption of hydrogen ions (H⁺) at defect sites and improving specific responses to pH variations. The optimized defect-engineered, liquid-gated MoS2 FET demonstrates a low subthreshold swing (SS) of 70 mV/dec in electrolyte solution, approaching the theoretical limit, with a record-high current sensitivity of 534.8%/pH in the subthreshold region due to the smaller SS. Remarkably, the device demonstrates a minimal hysteresis width of 5 nA after two cycling tests. Combined with theoretical calculations, this study reveals the crucial role of defect sites in MoS2 for the adsorption of H+ ions. The findings provide key insights for achieving high-performance pH sensors and offer important guidelines for maintaining the operational stability of FET biosensors in complex systems.