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<p>The impact of the zirconium dioxide as gate insulator material on the electrical performance of InAlN/AlN/GaN modulation doped field effect transistors (MODFETs) design proposed and has been investigated to solve the problem of the mechanical and thermal stability of enzyme-based biosensors. We compare the static performance of conventional GaN MODFETs with different gate insulators such as HfO<sub>2</sub> and ZrO<sub>2</sub>. A two-dimensional (2-D) numerical simulation study has predicted that the use of ZrO<sub>2</sub> gate insulator material is the possibility to improve the static performance of GaN metal insulator semiconductor modulation doped field effect transistors (MIS-MODFETs) biosensors. A significant decrease of the leakage current is observed in the proposed ZrO<sub>2</sub> based MIS-MODFETs than the others GaN MIS-MODFETs. Besides, ZrO<sub>2</sub> based MIS-MODFETs can have a gate leakage current that is four orders of magnitude lower than a conventional GaN MODFETs<i>.</i> The results provided a solid foundation for the development of next-generation biosensors with low power consumption, high stability, and extended durability.</p>

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Enzyme-Based GaN MODFET Biosensors Structure Design with Excellent Thermal Stability and Mechanical Strength of ZrO2 as Gate Insulator

  • 期刊论文

  • 发表日期：

    2025年12月8日

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  • Khaled Hebali,
  • Driss Bouguenna,
  • Abbès Beloufa,
  • Abdellah Bouguenna

摘要

The impact of the zirconium dioxide as gate insulator material on the electrical performance of InAlN/AlN/GaN modulation doped field effect transistors (MODFETs) design proposed and has been investigated to solve the problem of the mechanical and thermal stability of enzyme-based biosensors. We compare the static performance of conventional GaN MODFETs with different gate insulators such as HfO2 and ZrO2. A two-dimensional (2-D) numerical simulation study has predicted that the use of ZrO2 gate insulator material is the possibility to improve the static performance of GaN metal insulator semiconductor modulation doped field effect transistors (MIS-MODFETs) biosensors. A significant decrease of the leakage current is observed in the proposed ZrO2 based MIS-MODFETs than the others GaN MIS-MODFETs. Besides, ZrO2 based MIS-MODFETs can have a gate leakage current that is four orders of magnitude lower than a conventional GaN MODFETs. The results provided a solid foundation for the development of next-generation biosensors with low power consumption, high stability, and extended durability.