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<p>This work presents a novel Vertical Tunnel Field-Effect Transistor (TFET) architecture that incorporates a Triple Metal asymmetrical gate along with a SiGe pocket with polar gate to substantially enhance the Ion/Ioff ratio for ultra-sensitive biosensing applications. The proposed design harnesses the electrostatic advantages of high-K gate dielectrics and the bandgap engineering benefits of the SiGe pocket to achieve improved gate control and enhanced band-to-band tunneling (BTBT) efficiency. This integration results in greater sensitivity and performance, positioning the device as a strong candidate for detecting biomolecular interactions in ultra-low-power environments. In biosensing, the dielectric constant of biomolecules critically affects the gate capacitance, surface potential, and electrical behaviour of TFET-based sensors. Biomolecules such as APTES (<i>K</i> = 3.57), ferro-cytochrome c (<i>K</i> = 4.7), bacteriophage T7 (<i>K</i> = 6.3), protein (<i>K</i> = 8), and gelatin (<i>K</i> = 12) exhibit varying dielectric properties that influence the sensor’s electrostatics and detection capabilities. Among these, gelatin with its higher dielectric constant demonstrates a notable impact on device sensitivity and performance. To evaluate the device's characteristics, extensive TCAD simulations were performed, incorporating key physical effects such as non-local BTBT, bandgap narrowing, and mobility degradation. Results indicate that the proposed TFET structure effectively reduces OFF-state leakage while significantly enhancing ON-state drive current. At a dielectric constant of <i>K</i> = 12, the device achieves an impressive Ion/Ioff ratio of 1.2 × 10<sup>13</sup>, current sensitivity of 3.14×10⁹ and an average subthreshold swing of 44.21 mV/decade, and a threshold voltage of 0.44 V. These results mark a substantial improvement over traditional TFET designs. The synergistic combination of optimized gate electrostatics and engineered tunneling junctions demonstrates strong potential for highly sensitive, energy-efficient biosensors in future biomedical and diagnostic applications.</p>

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Design of a Vertical TFET with Triple Metal Gate and SiGe Pocket with Polar Gate for Ultra-Sensitive Biosensing: A Simulation Study

  • 期刊论文

  • 发表日期：

    2025年7月11日

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  • Manisha Patnaik,
  • Rashmi Rekha Sahoo,
  • Debi Prasad Dash,
  • Prabin Kumar Bera

摘要

This work presents a novel Vertical Tunnel Field-Effect Transistor (TFET) architecture that incorporates a Triple Metal asymmetrical gate along with a SiGe pocket with polar gate to substantially enhance the Ion/Ioff ratio for ultra-sensitive biosensing applications. The proposed design harnesses the electrostatic advantages of high-K gate dielectrics and the bandgap engineering benefits of the SiGe pocket to achieve improved gate control and enhanced band-to-band tunneling (BTBT) efficiency. This integration results in greater sensitivity and performance, positioning the device as a strong candidate for detecting biomolecular interactions in ultra-low-power environments. In biosensing, the dielectric constant of biomolecules critically affects the gate capacitance, surface potential, and electrical behaviour of TFET-based sensors. Biomolecules such as APTES (K = 3.57), ferro-cytochrome c (K = 4.7), bacteriophage T7 (K = 6.3), protein (K = 8), and gelatin (K = 12) exhibit varying dielectric properties that influence the sensor’s electrostatics and detection capabilities. Among these, gelatin with its higher dielectric constant demonstrates a notable impact on device sensitivity and performance. To evaluate the device's characteristics, extensive TCAD simulations were performed, incorporating key physical effects such as non-local BTBT, bandgap narrowing, and mobility degradation. Results indicate that the proposed TFET structure effectively reduces OFF-state leakage while significantly enhancing ON-state drive current. At a dielectric constant of K = 12, the device achieves an impressive Ion/Ioff ratio of 1.2 × 1013, current sensitivity of 3.14×10⁹ and an average subthreshold swing of 44.21 mV/decade, and a threshold voltage of 0.44 V. These results mark a substantial improvement over traditional TFET designs. The synergistic combination of optimized gate electrostatics and engineered tunneling junctions demonstrates strong potential for highly sensitive, energy-efficient biosensors in future biomedical and diagnostic applications.