<p>AlInN/AlN/GaN-based metal oxide semiconductor high electron mobility transistor (MOSHEMT) indicates better performance compared with the conventional AlGaN/GaN MOSHEMT for biologic detection. The present work is proposed for rapid detection of coronavirus with high sensitivity using AlInN/AlN/GaN MOSHEMT biosensors. AlInN/AlN/GaN heterostructure device demonstrated higher sensitivity (72% for AlInN/GaN, lower degradation and good stability with respect to the conventional AlGaN/AlN/GaN heterostructure device 66%). This improvement is attributed to the superior material properties of the barrier layer AlInN, which enable better charge carrier mobility and an optimized electrostatic environment for biosensing applications. Our approach provides a novel method to improve biosensor performance, offering the potential for faster and more accurate detection of viral infections in clinical settings. The results highlight the promise of the AlInN/AlN/GaN heterostructure as a next-generation platform for high-sensitivity biosensing, addressing the limitations of existing sensor technologies and contributing to ongoing efforts in pandemic management. A 2D calibrated simulation of the proposed model has been confirmed by comparing the analytical results with the Atlas-TCAD simulation results. Furthermore, designing an optimal the gate length is important for achieving high sensitivity. The effect of gate length on sensitivity has been investigated. It is observed that the increasing in the gate length could enhance the sensitivity. However, when the gate length is too larger or too small, the virus sensitivity would be suppressed conversely. This work suggests that the AlInN/AlN/GaN MOS-HEMTs modulated structure device would be good candidate for high-performance and highly sensitive biosensor for virus detection in future.</p>