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<p>Unlocking the potential of 2D materials like transition metal dichalcogenides (TMDCs) requires controllable, CMOS-compatible deposition techniques. Here, we report a wafer-scale, low-temperature atomic layer deposition (ALD) process for hafnium disulfide (HfS<sub>2</sub>) and demonstrate its direct integration into functional memristive devices. To realize reliable device operation, we develop a passivation strategy that preserves the integrity of the HfS<sub>2</sub> layer throughout subsequent processing, addressing a key bottleneck in scalable 2D material integration. Raman spectroscopy, scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD) provide insights into the crystallographic structure of the HfS<sub>2</sub> layer, while electrical measurements reveal reproducible behavior across the entire wafer, indicating that conduction is dominated by trap-assisted transport. Altogether, these results establish a robust and reproducible platform for HfS<sub>2</sub> integration in a wafer-scaled memristive device technology toward scalable, CMOS-compatible 2D electronics.</p>

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Low-temperature ALD-grown HfS2 for wafer-scale memristive device integration

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月26日

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  • Anna Linkenheil,
  • Jonas Schneegaß,
  • Bernd Hähnlein,
  • Alexander Shkurmanov,
  • Ole Gronenberg,
  • Lorenz Kienle,
  • Martin Ziegler

摘要

Unlocking the potential of 2D materials like transition metal dichalcogenides (TMDCs) requires controllable, CMOS-compatible deposition techniques. Here, we report a wafer-scale, low-temperature atomic layer deposition (ALD) process for hafnium disulfide (HfS2) and demonstrate its direct integration into functional memristive devices. To realize reliable device operation, we develop a passivation strategy that preserves the integrity of the HfS2 layer throughout subsequent processing, addressing a key bottleneck in scalable 2D material integration. Raman spectroscopy, scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD) provide insights into the crystallographic structure of the HfS2 layer, while electrical measurements reveal reproducible behavior across the entire wafer, indicating that conduction is dominated by trap-assisted transport. Altogether, these results establish a robust and reproducible platform for HfS2 integration in a wafer-scaled memristive device technology toward scalable, CMOS-compatible 2D electronics.