The manuscript showcases facile sol–gel synthesis of pristine and Tb3+-doped SnO2 nanoparticles [Sn1−xTbxO2 NPs, x = 0, 0.05, and 0.10]. Crystal structural analysis reveals the formation of a rutile-type tetragonal crystal configuration having a space group \(P{4}_{/2}mnm\) . The microstructural analysis depicts an enhancement in particle size from 18.88 to 24.62 nm with the substitution of Tb3+ in the vicinity of host SnO2. I–V characteristics of Sn1−xTbxO2 NPs show enhancement in resistance from 0.82 × 106 to 3.17 × 106 Ω due to doping of Tb3+ in host SnO2. Hall effect studies demonstrate the increment in mobility from 1.95 to 3.14 cm2/V s and a decrement in carrier concentration from 5.26 × 1016 cm−3 to 2.54 × 1016 cm−3 with Tb3+ intrusion in the crystal lattice of SnO2, transforming the system from n-type to p-type semiconductor. The enhanced visible emission in photoluminescence (PL) spectra confirms defect-induced radiative recombination and efficient energy transfer between Tb3+ ions and the SnO2 host lattice.
