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<p>This work explores the quantum confinement effects in a nanoscale double gate MOSFET by examining the bound state energy levels through the Non-Equilibrium Green’s Function (NEGF) method. The device proposed has a 1 nm thin silicon channel and double gate structure, providing strong electrostatic control and reduced short-channel effects. Simulation output shows that carrier transport is limited to discrete quantized energy states because of the ultra-thin channel, and bound state energies exhibit a quadratic relationship with the quantum number. The lowest-order energy levels dominate the definition of the threshold voltage, subthreshold slope, and overall switching performance, while higher-order states contribute negligibly under typical operating conditions. The double gate structure provides for uniform potential distribution, stabilizing subband formation and avoiding excessive energy broadening. The research verifies that quantum confinement and strong gate coupling are crucial for preserving efficient charge transport in ultra-scaled transistors. These results emphasize the importance of proper quantum transport modeling for the design and optimization of future nanoelectronic devices.</p>

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Quantum confinement and bound state energy analysis in ultra-thin double gate MOSFETs using NEGF approach

  • 期刊论文

  • 发表日期：

    2025年5月5日

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  • P. Kiran Kumar,
  • J.Sofia Priya Dharshini,
  • Srinivas Samala,
  • Nagamalli Arasavalli,
  • N. Ramanjaneyulu,
  • N. P. Dharani,
  • K. Rajesh Babu

摘要

This work explores the quantum confinement effects in a nanoscale double gate MOSFET by examining the bound state energy levels through the Non-Equilibrium Green’s Function (NEGF) method. The device proposed has a 1 nm thin silicon channel and double gate structure, providing strong electrostatic control and reduced short-channel effects. Simulation output shows that carrier transport is limited to discrete quantized energy states because of the ultra-thin channel, and bound state energies exhibit a quadratic relationship with the quantum number. The lowest-order energy levels dominate the definition of the threshold voltage, subthreshold slope, and overall switching performance, while higher-order states contribute negligibly under typical operating conditions. The double gate structure provides for uniform potential distribution, stabilizing subband formation and avoiding excessive energy broadening. The research verifies that quantum confinement and strong gate coupling are crucial for preserving efficient charge transport in ultra-scaled transistors. These results emphasize the importance of proper quantum transport modeling for the design and optimization of future nanoelectronic devices.