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<p>The silicon carbide (SiC) MOSFET is widelyemployed in high density and high efficiency power system because of its high switching speed. However, higher switching speed can bring undesirable side-effects, which cause stability problems in the phase-leg configuration. To evaluate stability during switching transients, this paper presents a stability evaluation method based on the feedback mechanism of the SiC MOSFET in the half-bridge circuit. By analyzing the transfer function of the two feedback branches, stability can be evaluated from the polarity of three LC networks formed by parasitic parameters between the terminals of the SiC MOSFET. Then, the influence of key parameters is carried out from the frequency domain based on simulation study. Experimental validation is conducted on a prototype with 1.2&#xa0;kV/36&#xa0;A discreet SiC MOSFETs. Finally, the stability guidelines for SiC MOSFETs are discussed. The proposed method can be used for making stability predictions on switching transient of SiC MOSFETs in practical power electronics applications.</p>

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Stability evaluation method for SiC MOSFET based on feedback mechanism

  • 期刊论文

  • 发表日期：

    2026年7月9日

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  • Fengming Yang,
  • Yifei Luo,
  • Xin Li,
  • Fei Xiao,
  • Lin Liang

摘要

The silicon carbide (SiC) MOSFET is widelyemployed in high density and high efficiency power system because of its high switching speed. However, higher switching speed can bring undesirable side-effects, which cause stability problems in the phase-leg configuration. To evaluate stability during switching transients, this paper presents a stability evaluation method based on the feedback mechanism of the SiC MOSFET in the half-bridge circuit. By analyzing the transfer function of the two feedback branches, stability can be evaluated from the polarity of three LC networks formed by parasitic parameters between the terminals of the SiC MOSFET. Then, the influence of key parameters is carried out from the frequency domain based on simulation study. Experimental validation is conducted on a prototype with 1.2 kV/36 A discreet SiC MOSFETs. Finally, the stability guidelines for SiC MOSFETs are discussed. The proposed method can be used for making stability predictions on switching transient of SiC MOSFETs in practical power electronics applications.