Scholarlink

<p>Output current capability can be expanded by high-power converters through the paralleling of IGBTs. However, parameter mismatch and layout asymmetry often lead to imbalanced current distribution. To address this problem, this paper presents a dynamic current trajectory feedback-based gate drive strategy (DCTF-GDS). Based on double-pulse tests under asymmetric layout conditions and within the allowable range of turn-off voltage overshoot and EMI suppression, a larger reference <i>di/dt</i> value is employed to realize current balancing and optimize switching losses. The proposed strategy employs <i>di/dt</i> feedback to reduce control delays and incorporates a mode-switching scheme to accommodate different switching stages, ensuring reliable operation of both the IGBT and the gate driver. In addition, a segmented bidirectional voltage regulation circuit is utilized to eliminate short-circuit risks. Experimental validation was carried out on an asymmetric parallel IGBTs platform. The results show that the dynamic current imbalance is limited to within 5% with the proposed strategy, confirming its effectiveness in high-power systems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Dynamic current trajectory feedback-based gate drive strategy for current balancing of parallel IGBTs

  • 期刊论文

  • 发表日期：

    2026年5月13日

查看全文
  • Yang Bai,
  • Qingyun Meng,
  • Weichao Li,
  • Anqi Hu,
  • Wuhua Li

摘要

Output current capability can be expanded by high-power converters through the paralleling of IGBTs. However, parameter mismatch and layout asymmetry often lead to imbalanced current distribution. To address this problem, this paper presents a dynamic current trajectory feedback-based gate drive strategy (DCTF-GDS). Based on double-pulse tests under asymmetric layout conditions and within the allowable range of turn-off voltage overshoot and EMI suppression, a larger reference di/dt value is employed to realize current balancing and optimize switching losses. The proposed strategy employs di/dt feedback to reduce control delays and incorporates a mode-switching scheme to accommodate different switching stages, ensuring reliable operation of both the IGBT and the gate driver. In addition, a segmented bidirectional voltage regulation circuit is utilized to eliminate short-circuit risks. Experimental validation was carried out on an asymmetric parallel IGBTs platform. The results show that the dynamic current imbalance is limited to within 5% with the proposed strategy, confirming its effectiveness in high-power systems.