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<p>Due to the rapid development of power electronics technology, the performance requirements for power semiconductor devices are continuously increasing. Traditional silicon-based devices are gradually showing deficiencies and silicon carbide (SiC) based devices have become a research hotspot. Thus, a 1200&#xa0;V/200&#xa0;A SiC MOSFET module has been developed to meet the application requirements of high voltage, large capacity, high operating frequency, and low switching losses. First, by optimizing the packaging design and adopting the double-sided silver pressure sintering process, the thermal stress of the module has been reduced and the interconnection strength between the copper bonding wires and the chips has been enhanced. Subsequently, the dynamic and static characteristics of the module were measured at room temperature (25&#xa0;°C), and the dynamic characteristics were measured at room temperature and high temperature (175&#xa0;°C). The results show that the module has good electrical stability of the insulation structure and low switching losses. Finally, an experimental platform was set up to conduct power cycling tests. The experiments demonstrated that the module can maintain stable conduction performance and a low conduction voltage drop under a large number of cycles, with a stable junction temperature difference and a long service life. The results of this research are expected to promote technological progress in related fields.</p>

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Design and reliability of high-performance 1200 V/200A SiC MOSFET power modules based on double-sided silver sintering enhancement

  • 期刊论文

  • 发表日期：

    2025年9月30日

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  • Changzhou Yu,
  • Yifei Wang,
  • Shaolin Yu,
  • Hao Wu,
  • Haizhen Xu,
  • Qin Wang,
  • Junhua Dong

摘要

Due to the rapid development of power electronics technology, the performance requirements for power semiconductor devices are continuously increasing. Traditional silicon-based devices are gradually showing deficiencies and silicon carbide (SiC) based devices have become a research hotspot. Thus, a 1200 V/200 A SiC MOSFET module has been developed to meet the application requirements of high voltage, large capacity, high operating frequency, and low switching losses. First, by optimizing the packaging design and adopting the double-sided silver pressure sintering process, the thermal stress of the module has been reduced and the interconnection strength between the copper bonding wires and the chips has been enhanced. Subsequently, the dynamic and static characteristics of the module were measured at room temperature (25 °C), and the dynamic characteristics were measured at room temperature and high temperature (175 °C). The results show that the module has good electrical stability of the insulation structure and low switching losses. Finally, an experimental platform was set up to conduct power cycling tests. The experiments demonstrated that the module can maintain stable conduction performance and a low conduction voltage drop under a large number of cycles, with a stable junction temperature difference and a long service life. The results of this research are expected to promote technological progress in related fields.