<p>The SiC/Si hybrid switch (SiC/Si HyS) has attracted great attention recently due to its high performance to cost ratio (HPCR) in high power density applications. However, in inverter applications where the load current varies in a large range during the sinusoidal period, SiC–MOSFET in a HyS withstands a large conducting current together with a switching current overshoot near the peak of the sinusoidal waveform. This serious condition increases the risk of SiC–MOSFET damage due to overcurrent and causes a system reliability problem. A gate driver circuit with an automatic triggering pattern switch depending on the sensing load current is proposed in this paper. The proposed approach enhances reliability using only one drive signal and a few affordable additional elements. An SiC/Si HyS three-phase four-wire inverter with a 5&#xa0;kW output power is built, and experimental results verify the effectiveness and feasibility of the proposed driving circuit and control strategy.</p>

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SiC/Si HyS inverter reliability enhancement based on automatic triggering pattern switch

  • Yongsheng Fu,
  • Hai-Peng Ren

摘要

The SiC/Si hybrid switch (SiC/Si HyS) has attracted great attention recently due to its high performance to cost ratio (HPCR) in high power density applications. However, in inverter applications where the load current varies in a large range during the sinusoidal period, SiC–MOSFET in a HyS withstands a large conducting current together with a switching current overshoot near the peak of the sinusoidal waveform. This serious condition increases the risk of SiC–MOSFET damage due to overcurrent and causes a system reliability problem. A gate driver circuit with an automatic triggering pattern switch depending on the sensing load current is proposed in this paper. The proposed approach enhances reliability using only one drive signal and a few affordable additional elements. An SiC/Si HyS three-phase four-wire inverter with a 5 kW output power is built, and experimental results verify the effectiveness and feasibility of the proposed driving circuit and control strategy.