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<p>The insulated gate bipolar transistor (IGBT), as a core component in flexible HVDC converter stations, generates wide-frequency electromagnetic interference (EMI) during switching operations, posing significant challenges to system stability. To address this, this study proposes a wide-frequency impedance modeling approach for elastically crimped IGBT devices, leveraging the differential evolution (DE) algorithm for precise parameter extraction. The developed model integrates key parasitic parameters (e.g., stray resistance and junction capacitance) and conforms to actual engineering applications. Comparative simulations demonstrate that the DE achieves superior accuracy in parameter optimization compared to traditional genetic algorithms (GA). The proposed DE model enhances EMI analysis and provides a foundation for designing reliable IGBT-based power systems. </p>

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Impedance modeling and parameter extraction of elastically crimped IGBT devices based on differential evolution

  • 期刊论文

  • 发表日期：

    2025年6月13日

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  • Can Li,
  • Bing Chen,
  • Wei Yan,
  • Mengxia Zhou,
  • Kai Xu

摘要

The insulated gate bipolar transistor (IGBT), as a core component in flexible HVDC converter stations, generates wide-frequency electromagnetic interference (EMI) during switching operations, posing significant challenges to system stability. To address this, this study proposes a wide-frequency impedance modeling approach for elastically crimped IGBT devices, leveraging the differential evolution (DE) algorithm for precise parameter extraction. The developed model integrates key parasitic parameters (e.g., stray resistance and junction capacitance) and conforms to actual engineering applications. Comparative simulations demonstrate that the DE achieves superior accuracy in parameter optimization compared to traditional genetic algorithms (GA). The proposed DE model enhances EMI analysis and provides a foundation for designing reliable IGBT-based power systems.