Investigations on size and composition effects on ideality factor models of InxGa1-xN/GaN solar cells
摘要
The III-nitride InGaN/GaN is an ideal candidate material for the fabrication of high-performance solar photovoltaic cells due to its high absorption coefficient and perfect match to the solar spectrum. In this paper, the ideality factors of InxGa1-xN/GaN-based multiple quantum well solar photovoltaic cells with different quantum well/barrier sizes and different indium compositions are investigated by numerical simulation using the single ideality factor model and the double-ideality factor model. It is shown that a higher indium composition is accompanied by a greater ideality factor. When the quantum well thickness is determined, the ideality factor decreases with the increase of the barrier thickness. When the barrier thickness is determined, the ideality factor decreases with the increase of the well thickness. A larger ideality factor means a larger Voc, a smaller Jsc, a higher dark current, and a lower power conversion efficiency. The goal of this paper is to preliminarily explore the influence law between the double ideality factor model and the cell-related parameters of InxGa1-xN/GaN-based solar photovoltaic cells, which provides a theoretical basis for designing and improving the efficiency of InxGa1-xN/GaN-based solar photovoltaic cells.