Dopant-free gradient-structured CuO photoelectrodes via spike-chemical bath deposition for enhanced photoelectrochemical performance
摘要
In this study, gradient and non-gradient CuO photoelectrodes were fabricated using a spike-chemical bath deposition (S-CBD) process. Their morphological, structural, optical, and electrical properties were systematically compared to investigate the effect of the gradient structure on the photoelectrochemical (PEC) performance. The S-CBD process enabled arbitrary variation of the precursor solution concentration during deposition, allowing the fabrication of a gradient CuO photoelectrode with gradually varying Cu concentration. The near-linear change in precursor concentration during deposition was confirmed by monitoring the pH variation of the injected precursor solution. The gradient structure of the resulting CuO photoelectrodes was verified by X-ray photoelectron spectroscopy (XPS) depth profiling. The optimized gradient CuO photoelectrode exhibited a photocurrent density of 2.48 mA/cm2 at -0.55 VSCE, representing approximately 31% enhancement compared to the non-gradient CuO photoelectrode (1.89 mA/cm2). Moreover, the S-CBD gradient CuO photoelectrode demonstrated superior crystallinity, lower resistance at the photoelectrode–electrolyte interface, and higher flat-band potential than the non-gradient counterpart. Finally, deposition of a NiOx capping layer enhanced the photostability of the CuO photoelectrode by 37.8%.