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<p>The continued scaling of semiconductor devices toward high-aspect-ratio architectures necessitates increasingly aggressive plasma etching conditions, which in turn accelerate the degradation of plasma-facing chamber components. Consequently, there is an urgent need to develop alternative materials that surpass conventional candidates, such as Al<sub>2</sub>O<sub>3</sub> and YAG, by offering both cost-effectiveness and superior erosion resistance. In this study, polycrystalline MgO ceramics were fabricated via hot pressing with the incorporation of Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, and SiO<sub>2</sub> additives. The effects of additive composition and sintering temperature on the resulting microstructure and plasma etching resistance were systematically investigated. The synthesized MgO ceramics exhibited a dense, fine-grained microstructure and achieved an etching rate significantly lower (12–33%) than that of a sapphire reference, while maintaining minimal surface roughness degradation after plasma exposure. Furthermore, crater formation was markedly suppressed, and fluorine ion (F<sup>−</sup>) penetration into the ceramic matrix was effectively inhibited. These findings demonstrate the significant potential of polycrystalline MgO ceramics as high-performance plasma-facing materials for next-generation semiconductor etching processes.</p>

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Exploring MgO polycrystalline ceramics as plasma etching resistant materials for semiconductor manufacturing processes under CF4/Ar/O2 atmosphere

  • 期刊论文

  • 发表日期：

    2026年5月4日

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  • Su Been Ham,
  • Seong-Hyeon Kim,
  • Ha-Neul Kim,
  • Young-Jo Park,
  • Jung-Hyung Kim,
  • Hyo-Chang Lee,
  • Ho Jin Ma

摘要

The continued scaling of semiconductor devices toward high-aspect-ratio architectures necessitates increasingly aggressive plasma etching conditions, which in turn accelerate the degradation of plasma-facing chamber components. Consequently, there is an urgent need to develop alternative materials that surpass conventional candidates, such as Al2O3 and YAG, by offering both cost-effectiveness and superior erosion resistance. In this study, polycrystalline MgO ceramics were fabricated via hot pressing with the incorporation of Al2O3, Y2O3, and SiO2 additives. The effects of additive composition and sintering temperature on the resulting microstructure and plasma etching resistance were systematically investigated. The synthesized MgO ceramics exhibited a dense, fine-grained microstructure and achieved an etching rate significantly lower (12–33%) than that of a sapphire reference, while maintaining minimal surface roughness degradation after plasma exposure. Furthermore, crater formation was markedly suppressed, and fluorine ion (F−) penetration into the ceramic matrix was effectively inhibited. These findings demonstrate the significant potential of polycrystalline MgO ceramics as high-performance plasma-facing materials for next-generation semiconductor etching processes.