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<p>This study demonstrates that at cryogenic temperatures (240&#xa0;K), charge trapping and detrapping at defect sites—rather than ionic migration—dominate the memory and hysteretic behavior in ZnO / methylammonium lead iodide (MAPbI₃)/ZnO perovskite devices. Transfer and output measurements under low temperature and dark conditions reveal pronounced hysteresis and systematic resistive switching, confirming that electric-field-driven charge trap dynamics can be reliably controlled. Using ZnO electrodes instead of noble metals (like gold) provides enhanced interface stability and reduces detrimental chemical reactions, while also enabling simultaneous electron transport and transparent conduction—making ZnO a cost-effective and functionally superior choice for perovskite device integration. The observed hysteresis and resistive switching in the ZnO/MAPbI₃/ZnO device at 240&#xa0;K are mainly due to charge trapping and detrapping at defects at the ZnO/perovskite interface. Field-induced trapping under high bias creates high-resistance states, while detrapping under moderate bias, especially at negative voltages, restores low-resistance states. These results confirm charge trapping as the leading mechanism for memory effects at low temperatures, and they highlight the benefits of using oxide semiconductor electrodes like ZnO for stable, gate-free, nonvolatile perovskite memory applications.</p>

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Gate-free memory operation via interface trap states in ZnO/perovskite/ZnO structures at low temperature

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • Jedo Kim,
  • Byoung-Nam Park

摘要

This study demonstrates that at cryogenic temperatures (240 K), charge trapping and detrapping at defect sites—rather than ionic migration—dominate the memory and hysteretic behavior in ZnO / methylammonium lead iodide (MAPbI₃)/ZnO perovskite devices. Transfer and output measurements under low temperature and dark conditions reveal pronounced hysteresis and systematic resistive switching, confirming that electric-field-driven charge trap dynamics can be reliably controlled. Using ZnO electrodes instead of noble metals (like gold) provides enhanced interface stability and reduces detrimental chemical reactions, while also enabling simultaneous electron transport and transparent conduction—making ZnO a cost-effective and functionally superior choice for perovskite device integration. The observed hysteresis and resistive switching in the ZnO/MAPbI₃/ZnO device at 240 K are mainly due to charge trapping and detrapping at defects at the ZnO/perovskite interface. Field-induced trapping under high bias creates high-resistance states, while detrapping under moderate bias, especially at negative voltages, restores low-resistance states. These results confirm charge trapping as the leading mechanism for memory effects at low temperatures, and they highlight the benefits of using oxide semiconductor electrodes like ZnO for stable, gate-free, nonvolatile perovskite memory applications.