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<p>The evolution of electronic devices demands materials that enhance performance, scalability, and energy efficiency while remaining cost-effective and compatible with modern fabrication techniques. Halide perovskites (HPs) have emerged as promising candidates for a variety of applications, notably in resistive switching (RS) memory devices, due to their unique electrical characteristics, adaptable structural features, and affordable, solution-based processing. These materials possess attributes such as a tunable bandgap, high carrier mobility, and exceptional flexibility, making them well-suited for advanced memory applications. Nevertheless, conventional three-dimensional (3D) HPs encounter significant challenges including ion migration, environmental instability, and limited integration with flexible electronics, which has stimulated the investigation of two-dimensional (2D) and quasi-two-dimensional (quasi-2D) HPs that offer enhanced stability, reduced ionic movement, and superior mechanical flexibility. This review of HP-based RS memory devices discusses their operational principles, structural advantages, and performance improvements while detailing the role of ionic charge displacement and the formation of conductive filaments under external electric fields in device operation. In addressing these challenges, the integration of 2D HPs characterized by organic-inorganic hybrid configurations has shown considerable benefits. The incorporation of large hydrophobic organic cations into 2D HP frameworks significantly improves environmental durability by limiting moisture entry and reducing ion mobility, and the inherent structure of these materials further contributes to device stability through notable retention times and consistent performance under ambient conditions. Recent advancements in fabricating 2D HP-based RS devices have led to impressive ON/OFF ratios, extended endurance cycles, and reliable operation in flexible configurations, thereby indicating their potential for use in wearable and bendable electronic systems. This review highlights the considerable promise of 2D HPs in overcoming the built-in limitations of 3D HPs with respect to environmental robustness, mechanical adaptability, and scalability, and establishes HP-based RS memory devices as key contributors to the future development of nonvolatile memory technologies. </p>

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Resistive switching memories with two-dimensional halide perovskites for flexible electronics

  • 期刊论文

  • 发表日期：

    2026年4月2日

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  • Hyojung Kim

摘要

The evolution of electronic devices demands materials that enhance performance, scalability, and energy efficiency while remaining cost-effective and compatible with modern fabrication techniques. Halide perovskites (HPs) have emerged as promising candidates for a variety of applications, notably in resistive switching (RS) memory devices, due to their unique electrical characteristics, adaptable structural features, and affordable, solution-based processing. These materials possess attributes such as a tunable bandgap, high carrier mobility, and exceptional flexibility, making them well-suited for advanced memory applications. Nevertheless, conventional three-dimensional (3D) HPs encounter significant challenges including ion migration, environmental instability, and limited integration with flexible electronics, which has stimulated the investigation of two-dimensional (2D) and quasi-two-dimensional (quasi-2D) HPs that offer enhanced stability, reduced ionic movement, and superior mechanical flexibility. This review of HP-based RS memory devices discusses their operational principles, structural advantages, and performance improvements while detailing the role of ionic charge displacement and the formation of conductive filaments under external electric fields in device operation. In addressing these challenges, the integration of 2D HPs characterized by organic-inorganic hybrid configurations has shown considerable benefits. The incorporation of large hydrophobic organic cations into 2D HP frameworks significantly improves environmental durability by limiting moisture entry and reducing ion mobility, and the inherent structure of these materials further contributes to device stability through notable retention times and consistent performance under ambient conditions. Recent advancements in fabricating 2D HP-based RS devices have led to impressive ON/OFF ratios, extended endurance cycles, and reliable operation in flexible configurations, thereby indicating their potential for use in wearable and bendable electronic systems. This review highlights the considerable promise of 2D HPs in overcoming the built-in limitations of 3D HPs with respect to environmental robustness, mechanical adaptability, and scalability, and establishes HP-based RS memory devices as key contributors to the future development of nonvolatile memory technologies.