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<p>In this study, CaCu<sub>3 − x</sub>Ni<sub>x</sub>Ti<sub>4</sub>O<sub>12</sub> dielectric ceramics were synthesized via the conventional solid-state reaction method and sintered at 1080&#xa0;°C for 6&#xa0;h. Dielectric properties measurement and electrochemical impedance spectroscopy (EIS) were employed to analyse the internal barrier layer capacitor (IBLC) behavior. At 10&#xa0;kHz, undoped CaCu<sub>3</sub>Ti₄O₁₂ (CCTO) exhibited a permittivity of 3475, a dielectric loss (tan δ) of 0.103, the grain boundary resistance of 8.24 × 10<sup>5</sup> Ω, and the activation energy of 0.539&#xa0;eV. However, Ni-doped CCTO ceramics significantly enhances the grain size and the dielectric properties, including a high permittivity of 5823 and a dielectric loss of 0.146 at 10&#xa0;kHz, along with a grain boundary resistance of 4.01 × 10<sup>5</sup> Ω and an activation energy of 0.421&#xa0;eV. Notably, the dielectric constant of 10&#xa0;mol% NiO-doped CCTO ceramics is approximately 1.7 times higher than that of the undoped CCTO ceramics.</p>

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The effect of Ni doping on the microstructure and dielectric properties of CaCu3Ti4O12 ceramics

  • 期刊论文

  • 发表日期：

    2026年1月16日

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  • Chu-Han Huang,
  • Ying-Chieh Lee,
  • Huei-Jyun Shih,
  • Christian Pithan,
  • Ping Wu,
  • Shayan Shoja

摘要

In this study, CaCu3 − xNixTi4O12 dielectric ceramics were synthesized via the conventional solid-state reaction method and sintered at 1080 °C for 6 h. Dielectric properties measurement and electrochemical impedance spectroscopy (EIS) were employed to analyse the internal barrier layer capacitor (IBLC) behavior. At 10 kHz, undoped CaCu3Ti₄O₁₂ (CCTO) exhibited a permittivity of 3475, a dielectric loss (tan δ) of 0.103, the grain boundary resistance of 8.24 × 105 Ω, and the activation energy of 0.539 eV. However, Ni-doped CCTO ceramics significantly enhances the grain size and the dielectric properties, including a high permittivity of 5823 and a dielectric loss of 0.146 at 10 kHz, along with a grain boundary resistance of 4.01 × 105 Ω and an activation energy of 0.421 eV. Notably, the dielectric constant of 10 mol% NiO-doped CCTO ceramics is approximately 1.7 times higher than that of the undoped CCTO ceramics.