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<p>Halide perovskites (HPs) possess distinctive structural and electrical characteristics that make them ideally suited for resistive-switching (RS) memory devices and field-effect transistors (FETs). Moreover, the analysis covers how defect engineering, compositional tuning, and structural modifications significantly contribute to enhancing RS behavior. This review also explores developments in HP-based FET architectures by examining various bottom-gate device configurations and assessing various material engineering strategies to boost device performance. This review considers the impact of grain boundaries, interface alterations, and doping methods on charge carrier mobility and threshold voltage. Ongoing research is dedicated to overcoming these challenges by refining synthesis protocols. The continual advancement of two-dimensional (2D) HP-based RS memory devices and FETs offers prospects for revolutionizing the landscape of next-generation electronic systems. 2D HPs could markedly propel high-performance, energy-efficient, and adaptable electronic systems through improved stability, scalability, and performance.</p>

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2D halide perovskites in modern electronics and their impact on high-performance resistive-switching memory device and field-effect transistors

  • 期刊论文

  • 发表日期：

    2025年8月6日

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  • Hyojung Kim

摘要

Halide perovskites (HPs) possess distinctive structural and electrical characteristics that make them ideally suited for resistive-switching (RS) memory devices and field-effect transistors (FETs). Moreover, the analysis covers how defect engineering, compositional tuning, and structural modifications significantly contribute to enhancing RS behavior. This review also explores developments in HP-based FET architectures by examining various bottom-gate device configurations and assessing various material engineering strategies to boost device performance. This review considers the impact of grain boundaries, interface alterations, and doping methods on charge carrier mobility and threshold voltage. Ongoing research is dedicated to overcoming these challenges by refining synthesis protocols. The continual advancement of two-dimensional (2D) HP-based RS memory devices and FETs offers prospects for revolutionizing the landscape of next-generation electronic systems. 2D HPs could markedly propel high-performance, energy-efficient, and adaptable electronic systems through improved stability, scalability, and performance.