Scholarlink

<p>α-Ga<sub>2</sub>O<sub>3</sub>, a metastable ultra-wide bandgap semiconductor, has attracted notable attention for high-power electronics and deep-ultraviolet applications due to its large bandgap and compatibility with sapphire substrates. Halide vapor phase epitaxy (HVPE) is a promising method for the scalable growth of α-Ga<sub>2</sub>O<sub>3</sub>, but ensuring high uniformity remains an important challenge, especially as wafer size increases to meet the demands of mass production. Herein, we employed computational fluid dynamics (CFD) and finite element method (FEM) to optimize the heteroepitaxial growth conditions of α-Ga<sub>2</sub>O<sub>3</sub> with the goal of attaining high deposition uniformity. First, we conducted a parametric study to evaluate how four critical parameters—carrier gas flow rate, outer gas flow rate, growth temperature, and susceptor distance—affect uniformity. Gaussian process regression was then applied to identify the optimal set of process parameters for enhanced uniformity. The resulting simulation findings provide a theoretical framework for optimizing HVPE growth conditions for α-Ga<sub>2</sub>O<sub>3</sub>, facilitating the way for highly uniform deposition on increasingly larger substrates. </p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Design of optimized halide vapor phase epitaxy (HVPE) conditions for uniform α-Ga2O3 growth based on CFD analysis

  • 期刊论文

  • 发表日期：

    2025年6月30日

查看全文
  • Woongchan Kim,
  • Hyeon Woo Kim,
  • Sung Beom Cho

摘要

α-Ga2O3, a metastable ultra-wide bandgap semiconductor, has attracted notable attention for high-power electronics and deep-ultraviolet applications due to its large bandgap and compatibility with sapphire substrates. Halide vapor phase epitaxy (HVPE) is a promising method for the scalable growth of α-Ga2O3, but ensuring high uniformity remains an important challenge, especially as wafer size increases to meet the demands of mass production. Herein, we employed computational fluid dynamics (CFD) and finite element method (FEM) to optimize the heteroepitaxial growth conditions of α-Ga2O3 with the goal of attaining high deposition uniformity. First, we conducted a parametric study to evaluate how four critical parameters—carrier gas flow rate, outer gas flow rate, growth temperature, and susceptor distance—affect uniformity. Gaussian process regression was then applied to identify the optimal set of process parameters for enhanced uniformity. The resulting simulation findings provide a theoretical framework for optimizing HVPE growth conditions for α-Ga2O3, facilitating the way for highly uniform deposition on increasingly larger substrates.