<p>The objective of this work is to prepare the Pd-decorated WS<sub>2</sub> nanostructures using a hydrothermal technique, which is subsequently utilized in designing a photodetector device for detecting different wavelengths of the solar spectrum. Broadband photodetection can be significantly enhanced by developing transition metal dichalcogenides with tunable band gaps and unique electrical and optical properties. The X-ray photoelectron spectroscopy analysis has confirmed the presence of W<sup>4+</sup> oxidation states, as evidenced by the observation of peaks corresponding to W5p<sub>3/2</sub>, W4f<sub>3/2</sub>, and W4f<sub>7/2</sub> with binding energies of 37.83, 34.36, and 32.29&#xa0;eV respectively. Plasmonic photodetector offers advantageous characteristics such as the ability to provide photodetection of different wavelengths by a single photodetector device. WS<sub>2</sub> exhibits a notable responsivity of 125&#xa0;mA·W<sup>−1</sup> and a detectivity of 8.40 × 10<sup>10</sup>&#xa0;cm·Hz<sup>1/2</sup>·W<sup>−1</sup>. On decorating with Pd, the responsivity and detectivity of the device increase up to 4.25 A·W<sup>−1</sup> and 1.16 × 10<sup>14</sup>&#xa0;cm·Hz<sup>1/2</sup>·W<sup>−1</sup>,&#xa0;respectively. By utilizing the plasmons at the semiconductor surface, a surface plasmon effect has been produced, thereby increasing the photocurrent value and offering numerous advantageous features.</p>

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Plasmon resonance enhanced Pd-decorated hybrid tungsten disulfide (WS2) multi-wavelength ultra-responsive photodetector

  • Alka Rani,
  • Arpit Verma,
  • Bal Chandra Yadav

摘要

The objective of this work is to prepare the Pd-decorated WS2 nanostructures using a hydrothermal technique, which is subsequently utilized in designing a photodetector device for detecting different wavelengths of the solar spectrum. Broadband photodetection can be significantly enhanced by developing transition metal dichalcogenides with tunable band gaps and unique electrical and optical properties. The X-ray photoelectron spectroscopy analysis has confirmed the presence of W4+ oxidation states, as evidenced by the observation of peaks corresponding to W5p3/2, W4f3/2, and W4f7/2 with binding energies of 37.83, 34.36, and 32.29 eV respectively. Plasmonic photodetector offers advantageous characteristics such as the ability to provide photodetection of different wavelengths by a single photodetector device. WS2 exhibits a notable responsivity of 125 mA·W−1 and a detectivity of 8.40 × 1010 cm·Hz1/2·W−1. On decorating with Pd, the responsivity and detectivity of the device increase up to 4.25 A·W−1 and 1.16 × 1014 cm·Hz1/2·W−1, respectively. By utilizing the plasmons at the semiconductor surface, a surface plasmon effect has been produced, thereby increasing the photocurrent value and offering numerous advantageous features.