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<p>GaN HEMTs significantly enhance power amplifier performance, yet high-speed switching induces severe transient oscillations in Dual-Buck Symmetrical Half-Bridge Converters (DBSHBC), leading to waveform distortion. This study develops a unified terminal impedance model for GaN HEMTs and freewheeling diodes, which achieves a 1.44% error in predicting oscillation frequency and reveals that reducing power loop inductance is critical for oscillation suppression. To address low-frequency harmonic distortion from traditional decoupling capacitors, this paper analyzed capacitor parameters and spatial layouts and introduced a Bridge-Arm-Side High-Frequency Decoupling <i>C</i>-<i>RC</i> Snubber Circuit Oscillation Suppression Strategy. Experimental results demonstrate that this strategy reduces GaN HEMT turn-off oscillation periods by 29.99% and freewheeling diode oscillation periods by 11.23%, while effectively eliminating low-frequency harmonic distortion. The proposed method maintains high-frequency suppression without compromising waveform integrity, enabling higher precision in power amplifier applications.</p>

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Research on Switching Oscillation Suppression Strategies for Dual-Buck Symmetrical Half-Bridge Converter Using GaN HEMTs

  • 期刊论文

  • 发表日期：

    2026年3月2日

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  • Jian Wei,
  • Xuewen Qiu,
  • Jingxin Chen,
  • Xiaokun Zhao,
  • Weinan Wang,
  • Jiawei Zhang,
  • E. Peng

摘要

GaN HEMTs significantly enhance power amplifier performance, yet high-speed switching induces severe transient oscillations in Dual-Buck Symmetrical Half-Bridge Converters (DBSHBC), leading to waveform distortion. This study develops a unified terminal impedance model for GaN HEMTs and freewheeling diodes, which achieves a 1.44% error in predicting oscillation frequency and reveals that reducing power loop inductance is critical for oscillation suppression. To address low-frequency harmonic distortion from traditional decoupling capacitors, this paper analyzed capacitor parameters and spatial layouts and introduced a Bridge-Arm-Side High-Frequency Decoupling C-RC Snubber Circuit Oscillation Suppression Strategy. Experimental results demonstrate that this strategy reduces GaN HEMT turn-off oscillation periods by 29.99% and freewheeling diode oscillation periods by 11.23%, while effectively eliminating low-frequency harmonic distortion. The proposed method maintains high-frequency suppression without compromising waveform integrity, enabling higher precision in power amplifier applications.