<p>This paper presents a stepped-ring-assisted junction termination extension (SRA-JTE) structure that integrates high-concentration P⁺ rings into a stepped-profile termination to enhance process tolerance for 6.5 kV SiC PiN diodes. Conventional JTE structures exhibit high sensitivity to process variations, particularly JTE dose fluctuations and fixed oxide charge (Q_F), which compromise device reliability and performance consistency. The proposed SRA-JTE structure maintains stable breakdown performance across a JTE dose window of 1.5 × 10¹² to 4 × 10¹² cm⁻². It demonstrates superior robustness with a coefficient of variation of 3.9% under varying Q_F conditions (±1 × 10¹² cm⁻²), compared to 37.5% and 9.7% for conventional single-zone and stepped JTE structures, respectively. Experimental validation confirms close agreement between simulated and measured results under realistic Q_F conditions of 0.5 × 10¹² cm⁻². The enhanced process tolerance and stable electrical characteristics demonstrate the practical viability of the SRA-JTE design for reliable 6.5 kV class SiC PiN diode applications with improved device performance consistency.</p>