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<p>We proposed 1.2&#xa0;kV SiC trench MOSFETs with trenched P-source and buried p<sup>+</sup> layers (BPL) to improve blocking capability. The trenched P-source effectively suppresses electric fields at a gate oxide through formation of deep p<sup>+</sup> junctions. However, gate oxide near n-source at the untrenched regions for P-source can be exposed to the electric field under a high drain bias condition. The depletion expanded from BPL in the proposed SiC trench MOSFET reduces the electric field at the gate. Effects of the distance between P-source and gate (D<sub>PG</sub>) in the SiC trench MOSFETs were analyzed through TCAD simulation. In addition, static and dynamic characteristics including on-resistance, breakdown voltage, and switching loss for the fabricated SiC trench MOSFETs using the BPL structure were evaluated. Our results showed that the breakdown voltage was enhanced by the BPL structure without significant sacrifice of electrical characteristic such as an on-resistance and threshold voltage.</p>

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Analysis of Static and Dynamic Characteristics of 1.2 kV 4H-SiC Trench MOSFETs with Trenched P-Source and Buried P+ Layers

  • 期刊论文

  • 发表日期：

    2025年1月18日

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  • Gyuhyeok Kang,
  • Yeongeun Park,
  • Ogyun Seok

摘要

We proposed 1.2 kV SiC trench MOSFETs with trenched P-source and buried p+ layers (BPL) to improve blocking capability. The trenched P-source effectively suppresses electric fields at a gate oxide through formation of deep p+ junctions. However, gate oxide near n-source at the untrenched regions for P-source can be exposed to the electric field under a high drain bias condition. The depletion expanded from BPL in the proposed SiC trench MOSFET reduces the electric field at the gate. Effects of the distance between P-source and gate (DPG) in the SiC trench MOSFETs were analyzed through TCAD simulation. In addition, static and dynamic characteristics including on-resistance, breakdown voltage, and switching loss for the fabricated SiC trench MOSFETs using the BPL structure were evaluated. Our results showed that the breakdown voltage was enhanced by the BPL structure without significant sacrifice of electrical characteristic such as an on-resistance and threshold voltage.