Scholarlink

<p>A dielectrically modulated asymmetric junction less tunnel field-effect transistor (AJ-TFET) based label-free biosensor is proposed and systematically investigated for early-stage breast cancer detection. The sensing mechanism exploits the contrast in dielectric permittivity between benign and malignant cell lines of breast cancer that contains a nanogap under the gate electrode. Two device configurations are analysed: a full-gate non overlapped structure (S1) and a source-overlapped gate structure (S2), to examine the trade-off between threshold voltage sensitivity and drain current sensitivity. Two-dimensional numerical simulations are performed using Sentaurus TCAD. The source region employs a Si<sub>0.5</sub>Ge<sub>0.5</sub> heterojunction to enhance tunnelling efficiency. The biosensor response is evaluated for multiple breast cancer cell lines with dielectric constants ranging from 4.5 (MCF-10&#xa0;A) to 32 (T-47D), under both ideal (fully filled) and non-ideal (partially and non-uniformly filled) cavity conditions. Simulation results reveal that the source-overlapped structure (S2) exhibits a maximum drain current sensitivity of on the order of 10<sup>4</sup>, along with a 49% reduction in threshold voltage compared to healthy cells, demonstrating superior turn-on characteristics. The comprehensive analysis confirms that source overlap significantly enhances tunnelling efficiency and sensing performance, making the proposed AJ-TFET biosensor a promising and reliable platform for highly sensitive, label-free breast cancer detection under realistic operating conditions.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Comparative performance analysis of dielectrically modulated AJ-TFET-based label-free breast cancer biosensors with full and overlapped gate structures

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月29日

查看全文
  • Basudha Dewan,
  • Parul Yadav,
  • Menka Yadav,
  • D. V. Prashant

摘要

A dielectrically modulated asymmetric junction less tunnel field-effect transistor (AJ-TFET) based label-free biosensor is proposed and systematically investigated for early-stage breast cancer detection. The sensing mechanism exploits the contrast in dielectric permittivity between benign and malignant cell lines of breast cancer that contains a nanogap under the gate electrode. Two device configurations are analysed: a full-gate non overlapped structure (S1) and a source-overlapped gate structure (S2), to examine the trade-off between threshold voltage sensitivity and drain current sensitivity. Two-dimensional numerical simulations are performed using Sentaurus TCAD. The source region employs a Si0.5Ge0.5 heterojunction to enhance tunnelling efficiency. The biosensor response is evaluated for multiple breast cancer cell lines with dielectric constants ranging from 4.5 (MCF-10 A) to 32 (T-47D), under both ideal (fully filled) and non-ideal (partially and non-uniformly filled) cavity conditions. Simulation results reveal that the source-overlapped structure (S2) exhibits a maximum drain current sensitivity of on the order of 104, along with a 49% reduction in threshold voltage compared to healthy cells, demonstrating superior turn-on characteristics. The comprehensive analysis confirms that source overlap significantly enhances tunnelling efficiency and sensing performance, making the proposed AJ-TFET biosensor a promising and reliable platform for highly sensitive, label-free breast cancer detection under realistic operating conditions.