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<p>In this work, carbon nanotubes (CNTs) synthesized by low-pressure chemical vapor deposition (LPCVD) on silicon (Si), quartz, gallium arsenide (GaAs), and gallium nitride (GaN) substrates are examined for their growth, field emission (FE), and gas sensing performance. Field emission scanning electron microscopy (FESEM) and Raman spectroscopy were used to examine the CNTs surface morphology, alignment, and structural quality of as prepared samples. The results showed notable substrate-dependent differences in growth behavior. Because of their dense, vertically aligned structure, which facilitates effective electron transport, FE experiments showed that CNTs grown on Si substrates have a superior electron emission property which is very low turn on 0.9&#xa0;V/µm threshold 1.175&#xa0;V/µm and high current density 13.56&#xa0;mA/cm<sup>2</sup> as compared to other. On the other hand, CNTs emitting on GaN substrates had better turn-on properties but a somewhat lower emission current. Different substrate-dependent sensing behavior was found in gas sensing investigations toward ammonia (NH₃), with CNTs on GaN substrates exhibiting quicker response 6s and recovery 12s than those on other substrates growing CNTs. The findings demonstrate how important substrate engineering is for modifying the morphology and functional performance of CNTs. This comparative analysis offers fresh perspectives on how to optimize CNTs-substrate systems for specific uses in gas sensing and field emission devices.</p>

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Substrate-Driven Enhancement of Field Emission and Gas Sensing in CNTs: A Comparative Study of Si, Quartz, GaAs, and GaN

  • 期刊论文

  • 发表日期：

    2026年5月3日

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  • Mohd Sarvar,
  • Shah Masheerul Aalam,
  • Javid Ali

摘要

In this work, carbon nanotubes (CNTs) synthesized by low-pressure chemical vapor deposition (LPCVD) on silicon (Si), quartz, gallium arsenide (GaAs), and gallium nitride (GaN) substrates are examined for their growth, field emission (FE), and gas sensing performance. Field emission scanning electron microscopy (FESEM) and Raman spectroscopy were used to examine the CNTs surface morphology, alignment, and structural quality of as prepared samples. The results showed notable substrate-dependent differences in growth behavior. Because of their dense, vertically aligned structure, which facilitates effective electron transport, FE experiments showed that CNTs grown on Si substrates have a superior electron emission property which is very low turn on 0.9 V/µm threshold 1.175 V/µm and high current density 13.56 mA/cm2 as compared to other. On the other hand, CNTs emitting on GaN substrates had better turn-on properties but a somewhat lower emission current. Different substrate-dependent sensing behavior was found in gas sensing investigations toward ammonia (NH₃), with CNTs on GaN substrates exhibiting quicker response 6s and recovery 12s than those on other substrates growing CNTs. The findings demonstrate how important substrate engineering is for modifying the morphology and functional performance of CNTs. This comparative analysis offers fresh perspectives on how to optimize CNTs-substrate systems for specific uses in gas sensing and field emission devices.