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<p>Kesterite—based thin-film solar cells are promising for sustainable photovoltaics but face efficiency limitations from absorber—related defects. In this work, we explore Cu₂NiGeS₄ (CNGS) as a novel absorber layer and using SCAPS-1D simulations. We propose an optimized device architecture: Mo/MoS₂/Cu₂NiGeS₄ (CNGS)/CdS/ZnO/ZnO: Al. Simulation results emphasize the importance of band alignment and defect control in minimizing recombination and ensuring efficient carrier transport. The optimal configuration, with a 2000–2400&#xa0;nm CNGS absorber, 100&#xa0;nm MoS₂ back surface field layer, and 20–50&#xa0;nm CdS buffer, achieves an efficiency of 20.05%, along with a 0.983&#xa0;V open-circuit voltage, 29.67&#xa0;mA/cm² short-circuit current density, and 66.77% fill factor. These results establish CNGS as a strong absorber candidate for high-performance thin-film solar cells, with potential for further gains through structural and interface optimization.</p>

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SCAPS-1D Analysis for High-Efficiency CNGS Based Kesterite Solar Cells

  • 期刊论文

  • 发表日期：

    2025年11月4日

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  • Janhavi Pandey,
  • Anchal Srivastava,
  • R. K. Shukla

摘要

Kesterite—based thin-film solar cells are promising for sustainable photovoltaics but face efficiency limitations from absorber—related defects. In this work, we explore Cu₂NiGeS₄ (CNGS) as a novel absorber layer and using SCAPS-1D simulations. We propose an optimized device architecture: Mo/MoS₂/Cu₂NiGeS₄ (CNGS)/CdS/ZnO/ZnO: Al. Simulation results emphasize the importance of band alignment and defect control in minimizing recombination and ensuring efficient carrier transport. The optimal configuration, with a 2000–2400 nm CNGS absorber, 100 nm MoS₂ back surface field layer, and 20–50 nm CdS buffer, achieves an efficiency of 20.05%, along with a 0.983 V open-circuit voltage, 29.67 mA/cm² short-circuit current density, and 66.77% fill factor. These results establish CNGS as a strong absorber candidate for high-performance thin-film solar cells, with potential for further gains through structural and interface optimization.