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<p>In this work, we have proposed and demonstrated a novel 3D GaAs gate all around (GAA) step gate oxide (SGO) junctionless field effect transistor (JLFET) for low power applications. The proposed structure includes step gate oxide which is thick towards drain and thin towards source. The thickness and length of step gate oxide is optimized to improve short channel effects parameters. The inclusion of step gate oxide increases the band to band tunneling width towards drain side that causes decrement in off state current because of reduction in GIDL effect. Reduction in gate capacitances leads to increase in cutoff frequencies and lowering of capacitive load. Extensive Silvaco TCAD simulations for proposed device have shown an exceptionally low off state current (I<sub>OFF</sub> ~ 10<sup>–13</sup>&#xa0;A) and subthreshold swing (~ 65.31 mV/dec) even for 20&#xa0;nm channel length. The DIBL of ~ 0.0728 is also obtained with extremely high I<sub>ON</sub>/I<sub>OFF</sub> ratio of the order of 10<sup>7</sup>.</p>

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SCEs Reduction in 3D GaAs Junctionless FET Using Step Gate Oxide

  • 期刊论文

  • 发表日期：

    2025年10月28日

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  • Abhishek Raj,
  • Ashish Kumar,
  • Shashi Kant Sharma

摘要

In this work, we have proposed and demonstrated a novel 3D GaAs gate all around (GAA) step gate oxide (SGO) junctionless field effect transistor (JLFET) for low power applications. The proposed structure includes step gate oxide which is thick towards drain and thin towards source. The thickness and length of step gate oxide is optimized to improve short channel effects parameters. The inclusion of step gate oxide increases the band to band tunneling width towards drain side that causes decrement in off state current because of reduction in GIDL effect. Reduction in gate capacitances leads to increase in cutoff frequencies and lowering of capacitive load. Extensive Silvaco TCAD simulations for proposed device have shown an exceptionally low off state current (IOFF ~ 10–13 A) and subthreshold swing (~ 65.31 mV/dec) even for 20 nm channel length. The DIBL of ~ 0.0728 is also obtained with extremely high ION/IOFF ratio of the order of 107.