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<p>Quantum dots (QDs) have emerged as promising material for next-generation infrared (IR) optoelectronic devices thanks to their tunable band gaps, solution-processability, and scalability for large-area fabrication. Early studies primarily focused on lead-based QDs such as PbS and PbSe as absorbing QDs; however, environmental concerns and regulatory restrictions have prompted a shift towards research toward lead-free III–V QDs, including InAs and InSb. These QDs exhibit broad bandgap tunability across the infrared spectrum, thereby supporting diverse IR sensing applications such as autonomous driving and biomedical imaging. Despite these advantages, challenges remain. This review summarizes the structural and optoelectronic characteristics of representative QDs and analyzes the performance and limitations of QD-based photodiodes. Recent strategies for enhancing performance, including material engineering and device architecture optimization, are discussed in detail. Finally, we highlight advances in QD patterning techniques and integrated IR image sensors, providing insights into the future directions for the development of high-resolution, low-cost, and environmentally friendly QD-based imaging technologies.</p>

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Quantum Dot-Based Infrared Photodiodes and Image Sensors

  • 期刊论文

  • 发表日期：

    2025年10月14日

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  • Seongyong Hong,
  • Dae Yang Oh,
  • Soong Ju Oh

摘要

Quantum dots (QDs) have emerged as promising material for next-generation infrared (IR) optoelectronic devices thanks to their tunable band gaps, solution-processability, and scalability for large-area fabrication. Early studies primarily focused on lead-based QDs such as PbS and PbSe as absorbing QDs; however, environmental concerns and regulatory restrictions have prompted a shift towards research toward lead-free III–V QDs, including InAs and InSb. These QDs exhibit broad bandgap tunability across the infrared spectrum, thereby supporting diverse IR sensing applications such as autonomous driving and biomedical imaging. Despite these advantages, challenges remain. This review summarizes the structural and optoelectronic characteristics of representative QDs and analyzes the performance and limitations of QD-based photodiodes. Recent strategies for enhancing performance, including material engineering and device architecture optimization, are discussed in detail. Finally, we highlight advances in QD patterning techniques and integrated IR image sensors, providing insights into the future directions for the development of high-resolution, low-cost, and environmentally friendly QD-based imaging technologies.