<p>A two-dimensional numerical model based on the finite difference method is developed to analyze the electric field distribution and channel potential in an Al-doped Dual-Channel Double Material Gate MgZnO/ZnO High Electron Mobility Transistor (Al-DC-DMG-MZO HEMT). The model provides a precise numerical solution for the potential and charge distribution across the device by discretizing Poisson’s and continuity equations using the finite difference method. This approach effectively demonstrates the impact of Al doping in suppressing short-channel effects (SCEs), reducing dynamic ON-resistance degradation, and enhancing device current drive capability. The presence of aluminium in the MgZnO layer influences carrier confinement and improves electron transport efficiency by modifying the 2-DEG charge distribution. The developed model exhibits strong predictive capability for the electric field and channel potential variations, confirming that the dual material gate structure with Al doping induces a screening effect, thereby reducing hot carrier effects and mitigating drain-induced barrier lowering (DIBL). These enhancements contribute to a more uniform electric field profile along the channel, minimizing scattering and optimizing carrier mobility. Additionally, the incorporation of a graded lower channel in the device reduces current collapse by distancing the active channel from surface traps. The proposed model also accounts for trap concentration effects, which play a crucial role in device performance and reliability. The theoretical results obtained from the model align closely with simulation outcomes and experimental data, validating the effectiveness of the finite difference method in accurately characterizing the electrical behaviour of Al-doped MgZnO/ZnO HEMTs.</p>