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<p>Ferroelectric materials have a variety of intriguing uses as thermal sensors. However, some of the unavoidable shortcomings like toxocity, as well as limited temperature-frequency dependent sensitivity, rule out their usage in various inventive applications. Thus, the present research has been intended to explore a Bismuth-Nickel-Niobate (BNN) based ceramic solid solution Bi(Ni<sub>2/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub> that is supported by the examined dielectric, impedance, polarization, leakage current density and capacitive characteristics. The material’s structural feature and polycrystalline microstructure of uniformly dispersed grains are evident from the X-ray pattern and FESEM micrograph, respectively, with a calculated average crystallite size of 42&#xa0;nm and average grain size of 37&#xa0;μm. The ac conductivity character enlightens about the nature and conduction mechanism of the processed material. The presence of non-Debye dielectric relaxation in the produced material is clarified by the modulus analysis. The processed non-toxic BNN material entails appreciable dielectric constant (ε<sub>r</sub>  =  4 × 10<sup>2</sup>), relatively low dielectric loss, as well as electrical conductivity, which can be distinguished as a budding contender for the creation of capacitive theremal sensor with a measured sensitivity of 592 fF/°C, for cutting-edge electronic applications.</p>

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Processing and Development of Lead Free Bi(Ni2/3Nb1/3)O3 Ferroelectric Material for Thermal Sensing Electronic Device

  • 期刊论文

  • 发表日期：

    2025年7月7日

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  • Arun Kumar Das,
  • Priyanka Mishra,
  • Sushree S. Biswal,
  • Arya Tripathy,
  • Satyanarayan Bhuyan

摘要

Ferroelectric materials have a variety of intriguing uses as thermal sensors. However, some of the unavoidable shortcomings like toxocity, as well as limited temperature-frequency dependent sensitivity, rule out their usage in various inventive applications. Thus, the present research has been intended to explore a Bismuth-Nickel-Niobate (BNN) based ceramic solid solution Bi(Ni2/3Nb1/3)O3 that is supported by the examined dielectric, impedance, polarization, leakage current density and capacitive characteristics. The material’s structural feature and polycrystalline microstructure of uniformly dispersed grains are evident from the X-ray pattern and FESEM micrograph, respectively, with a calculated average crystallite size of 42 nm and average grain size of 37 μm. The ac conductivity character enlightens about the nature and conduction mechanism of the processed material. The presence of non-Debye dielectric relaxation in the produced material is clarified by the modulus analysis. The processed non-toxic BNN material entails appreciable dielectric constant (εr  =  4 × 102), relatively low dielectric loss, as well as electrical conductivity, which can be distinguished as a budding contender for the creation of capacitive theremal sensor with a measured sensitivity of 592 fF/°C, for cutting-edge electronic applications.