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<p>As MOSFETs approach their scaling limits, facing challenges like power leakage and slower switching speeds, Tunnel Field-Effect Transistors (TFETs) emerge as a promising alternative with lower leakage currents and faster performance. This study leverages Synopsys Sentaurus TCAD simulations to examine how different work functions (4.1, 4.2, 4.3, and 4.4&#xa0;eV) affect key Step Tunneling Path (STP) TFET parameters, including threshold voltage, ON/OFF currents, cut off frequency, and subthreshold swing. The results indicate that increasing the work function leads to a higher threshold voltage, which reduces leakage current and enhances stability. Conversely, lower work functions result in faster switching speeds. An inverse relationship was observed between the ON and OFF-state currents, as well as the cutoff frequency, with peak values occurring at 4.1&#xa0;eV. These findings underscore the potential of TFETs, particularly those with Step Tunneling Paths (STP), as strong candidates for low-power, high-speed applications.</p>

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Work Function Engineering on Electrical Parameters for Step Tunneling Path TFET

  • 期刊论文

  • 发表日期：

    2025年5月21日

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  • Aman Singh,
  • Priyambada Hazarika,
  • Jatismar Saha,
  • Manosh Protim Gogoi,
  • Rupam Goswami,
  • Rajesh Saha

摘要

As MOSFETs approach their scaling limits, facing challenges like power leakage and slower switching speeds, Tunnel Field-Effect Transistors (TFETs) emerge as a promising alternative with lower leakage currents and faster performance. This study leverages Synopsys Sentaurus TCAD simulations to examine how different work functions (4.1, 4.2, 4.3, and 4.4 eV) affect key Step Tunneling Path (STP) TFET parameters, including threshold voltage, ON/OFF currents, cut off frequency, and subthreshold swing. The results indicate that increasing the work function leads to a higher threshold voltage, which reduces leakage current and enhances stability. Conversely, lower work functions result in faster switching speeds. An inverse relationship was observed between the ON and OFF-state currents, as well as the cutoff frequency, with peak values occurring at 4.1 eV. These findings underscore the potential of TFETs, particularly those with Step Tunneling Paths (STP), as strong candidates for low-power, high-speed applications.