Synthesis and Ameliorating the Features of PMMA/CdS-SiO2 Futuristic Nanomaterials for Nanoelectronics and Optical Applications
摘要
The current project aims to create of cadmium sulfide (CdS)/ silicon dioxide (SiO2) nanoparticles doped poly-methyl methacrylate (PMMA) as futuristic nanostructures that can be useful in a variety of photonics and nanoelectronics applications. The structure, electronic, optical and morphological characteristics of PMMA/CdS-SiO2 nanostructures were analysed. The rising of CdS-SiO2 NPs content increased to 3.6wt.% leads to the decrease of transmittance by 56.1% while the absorbance of PMMA increased by 81.4% at λ = 340 nm. In light of these findings, the PMMA/CdS-SiO2 nanostructures have the potential to be beneficial in a wide variety of optical and nanoelectronics applications. As the content of CdS-SiO2 NPs increased, the other optical and electronic characteristics were improved. Finally, the obtained results showed that the PMMA/CdS-SiO2 nanostructures are regarded as futuristic nanocomposites films to be utilized in the modified prospective photonics and nanoelectronics applications.