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<p>Electrical and optoelectronic devices depend on ohmic contacts for charge carrier injection and extraction. Nickel oxide nanofilm (NiO-NF) is suitable for such applications due to its thermal stability, transparency, and electrical conductivity. Achieving low-resistance ohmic contacts with n-type NiO-NF is difficult due to its large bandgap, Fermi level pinning, and interface issues. In this work, NiO-NF was synthesized by spraying a solution of NiCl<sub>2</sub>.6H<sub>2</sub>O using the spray pyrolysis method. At the end of the process, a pulse laser-ablated gold nanoparticle (Au-NPs) was incorporated into the spray, resulting in the formation of Au-sprayed NiO-NF. The objective was to improve the electrical conductivity at the interface between the NiO-NF and metal electrodes. Hall effect measurements indicate that the NiO-NF is an n-type semiconductor. The Transmission Line Method was utilized to calculate the contact resistance (<i>R</i><sub><i>c</i></sub>), specific contact resistance (ρ<sub>c</sub>), and current transfer length (<i>L</i><sub><i>T</i></sub>) for NiO-NF and Au-sprayed NiO-NF. Direct contact with Au, Al, Ni, and Ag metals initially resulted in Schottky barriers. The introduction of Au-NPs between metal electrodes and N-type NiO-NF changes the Schottky barrier into ohmic contacts for all the applied metals. Al outperformed other metals in electrical conductivity with Au-sprayed NiO-NF, achieving R<sub>c</sub> of 0.42 KΩ and ρ<sub>c</sub> of 1.54E-07 KΩ.cm<sup>2</sup>. This is due to Al’s lower work function, which results in a smaller barrier. Moreover, the presence of Au-NPs can further reduce the barrier height. Overall, the performance of semiconductor devices can be improved by introducing a small amount of Au-NPs between the metallic electrode and nanofilm.</p>

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Improving the Performance of Ohmic Contacts of Metal/n-type NiO Nanofilms by Introducing Au-NPs in the Intermediate Layer

  • 期刊论文

  • 发表日期：

    2025年3月20日

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  • Lary H. Slewa,
  • Samira Yousif Asoka,
  • Nawroz Ismael Hassan,
  • Hazha Omar Othman,
  • Rebwar Omar Hassan

摘要

Electrical and optoelectronic devices depend on ohmic contacts for charge carrier injection and extraction. Nickel oxide nanofilm (NiO-NF) is suitable for such applications due to its thermal stability, transparency, and electrical conductivity. Achieving low-resistance ohmic contacts with n-type NiO-NF is difficult due to its large bandgap, Fermi level pinning, and interface issues. In this work, NiO-NF was synthesized by spraying a solution of NiCl2.6H2O using the spray pyrolysis method. At the end of the process, a pulse laser-ablated gold nanoparticle (Au-NPs) was incorporated into the spray, resulting in the formation of Au-sprayed NiO-NF. The objective was to improve the electrical conductivity at the interface between the NiO-NF and metal electrodes. Hall effect measurements indicate that the NiO-NF is an n-type semiconductor. The Transmission Line Method was utilized to calculate the contact resistance (Rc), specific contact resistance (ρc), and current transfer length (LT) for NiO-NF and Au-sprayed NiO-NF. Direct contact with Au, Al, Ni, and Ag metals initially resulted in Schottky barriers. The introduction of Au-NPs between metal electrodes and N-type NiO-NF changes the Schottky barrier into ohmic contacts for all the applied metals. Al outperformed other metals in electrical conductivity with Au-sprayed NiO-NF, achieving Rc of 0.42 KΩ and ρc of 1.54E-07 KΩ.cm2. This is due to Al’s lower work function, which results in a smaller barrier. Moreover, the presence of Au-NPs can further reduce the barrier height. Overall, the performance of semiconductor devices can be improved by introducing a small amount of Au-NPs between the metallic electrode and nanofilm.