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<p>The performance of InGaN green laser diode is enhanced by introducing p-doped quaternary (AlInGaN) interlayer in the p-side of the laser diode. The results reveal that laser output power is enhanced from 55 mW to 78 mW, laser threshold current is reduced from 2.47&#xa0;mA to 1.69&#xa0;mA and laser gain is improved. Additionally, the slope efficiency is substantially improved from 0.25&#xa0;W/A to 1.88&#xa0;W/A. Also, increasing the aluminum concentration from 20% to 40% in the quaternary p-AlInGaN interlayer has shown remarkable improvement in the green LD. The heterostructure green laser diodes are analyzed numerically using state-of-the-art computational tool i.e., SiLENSe™ 6.5.1.</p>

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Effect of Quaternary p-AlInGaN Interlayer on the Light Output Power and Gain of InGaN Green Laser Diode

  • 期刊论文

  • 发表日期：

    2025年2月19日

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  • Laraib Mustafa,
  • Muhammad Usman,
  • Shazma Ali,
  • Jamshad Bashir,
  • Muneeba Gul

摘要

The performance of InGaN green laser diode is enhanced by introducing p-doped quaternary (AlInGaN) interlayer in the p-side of the laser diode. The results reveal that laser output power is enhanced from 55 mW to 78 mW, laser threshold current is reduced from 2.47 mA to 1.69 mA and laser gain is improved. Additionally, the slope efficiency is substantially improved from 0.25 W/A to 1.88 W/A. Also, increasing the aluminum concentration from 20% to 40% in the quaternary p-AlInGaN interlayer has shown remarkable improvement in the green LD. The heterostructure green laser diodes are analyzed numerically using state-of-the-art computational tool i.e., SiLENSe™ 6.5.1.