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<p>In this work, we successfully synthesized Co<sub>2</sub>FeGa Heusler alloy nanowires in anodic alumina templates (AAO) using an easy and low-cost electrodeposition method at room temperature. The influence of the deposition parameter was optimized to achieve the appropriate stoichiometry of Heusler alloy nanowires (HANWs). The structural, morphological, static, and dynamic magnetic properties were investigated as a function of deposition potential for Co<sub>2</sub>FeGa nanowires. The formation of the Heusler alloy phase was confirmed by the X-ray diffraction pattern, which indicates a moderately ordered B2 type crystal structure at a deposition potential of -2.0&#xa0;V. The quantitative analysis done using EDX confirmed that the best stoichiometry for the full Heusler alloy (X<sub>2</sub>YZ) was obtained for − 2.0&#xa0;V deposition potential. Low deposition potentials below – 2.0&#xa0;V show off-stoichiometry of intermetallic compound nanowires. The role of deposition potential on the electronic and magnetic properties of Heusler alloys in stoichiometric and off-stoichiometric configurations was validated through Density Functional Theory (DFT) calculations. The LSDA + U approximation was used to compute the band structures which indicate the contribution from majority and minority spins. From the hysteresis loop of the studied NWs, it is observed that saturation magnetization attains maximum value for Heusler phase and is reduced for off-stoichiometry phase. Similarly, coercivity reduced considerably with decrease in deposition potential. The conventional ferromagnetic resonance technique was used to derive various intrinsic parameters such as gyromagnetic ratio, inhomogeneity in the nanowires, and Gilbert damping from the FMR spectra data. It was observed that the Gilbert damping was slightly higher for appropriate stoichiometric Co<sub>2</sub>FeGa NWs obtained at a deposition potential of − 2&#xa0;V then deposited at lower potentials.</p>

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Stoichiometric Effect on Structural, Morphological and Magnetic Properties of Co2FeGa Nanowires: Validation Using Density Functional Theory

  • 期刊论文

  • 发表日期：

    2025年2月15日

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  • Sachin Singh,
  • Monika Sharma,
  • Anju Aggarwal,
  • P. K. Jha,
  • Tahir Ahmad,
  • Bijoy Kumar Kuanr

摘要

In this work, we successfully synthesized Co2FeGa Heusler alloy nanowires in anodic alumina templates (AAO) using an easy and low-cost electrodeposition method at room temperature. The influence of the deposition parameter was optimized to achieve the appropriate stoichiometry of Heusler alloy nanowires (HANWs). The structural, morphological, static, and dynamic magnetic properties were investigated as a function of deposition potential for Co2FeGa nanowires. The formation of the Heusler alloy phase was confirmed by the X-ray diffraction pattern, which indicates a moderately ordered B2 type crystal structure at a deposition potential of -2.0 V. The quantitative analysis done using EDX confirmed that the best stoichiometry for the full Heusler alloy (X2YZ) was obtained for − 2.0 V deposition potential. Low deposition potentials below – 2.0 V show off-stoichiometry of intermetallic compound nanowires. The role of deposition potential on the electronic and magnetic properties of Heusler alloys in stoichiometric and off-stoichiometric configurations was validated through Density Functional Theory (DFT) calculations. The LSDA + U approximation was used to compute the band structures which indicate the contribution from majority and minority spins. From the hysteresis loop of the studied NWs, it is observed that saturation magnetization attains maximum value for Heusler phase and is reduced for off-stoichiometry phase. Similarly, coercivity reduced considerably with decrease in deposition potential. The conventional ferromagnetic resonance technique was used to derive various intrinsic parameters such as gyromagnetic ratio, inhomogeneity in the nanowires, and Gilbert damping from the FMR spectra data. It was observed that the Gilbert damping was slightly higher for appropriate stoichiometric Co2FeGa NWs obtained at a deposition potential of − 2 V then deposited at lower potentials.