<p>The enquiry strives to explore the role of delicate interplay between <i>spatial dispersion of impurity</i> and <i>Gaussian white noise</i> on <i>interband emission energy</i> and <i>magnetic susceptibility</i> of <i>doped GaAs quantum dot</i>. The interplay mentioned above is delicately governed by the route of entry (additive/multiplicative) of noise to the system and the width of the spatial spread of impurity. In case of magnetic susceptibility, however, the range of magnetic field strength also participates in the said interplay. A progressive enhancement of impurity stretch diminishes the interband emission energy under all conditions. However, for a given spatial stretch of impurity, the increase/decrease of the said emission energy depends on the noise mode. Devoid of noise and under additive noise the magnetic susceptibility displays only diamagnetic features. In presence of multiplicative noise, although some paramagnetic feature emerges, but diamagnetism seems to be much more pronounced and even maximizes in the vicinity of some specific magnitudes of the magnetic field. The study unveils that, a gradual change of impurity spread, coupled with the mode of entry of noise, can sensitively tune the above properties.</p>