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<p>In this work, Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films were prepared by the spin coating method, varying the spin cycles, used as a back contact layer for CdTe thin film solar cells in superstrate geometry. X-ray diffraction (XRD) and micro-Raman analysis confirmed the formation of pure kesterite-phase CZTS with a grain size ranging from 14.95 to 16.35&#xa0;nm with p-type electrical conductivity. The FESEM analysis confirmed the uniform coating of thin films over the substrate, which is supported by the AFM analysis. The oxidation states of Cu, Zn, Sn, and S were confirmed from the XPS analysis. The prepared CZTS shows direct allowed transitions with bandgap energy varying from 1.54 to 1.62&#xa0;eV. The quantitative analysis of electronic states was carried out using the ultraviolet photoelectron spectroscopy (UPS). The combined results indicated that the CZTS thin films can be utilized as a back contact buffer layer for CdTe photovoltaics (CdTe PV). The FTO/CdS/CdTe/CZTS/Ag structured cell produced a PCE of 8.34% with Voc, Jsc, and FF values of 0.684&#xa0;V, 22.32&#xa0;mA/cm<sup>2,</sup> and 54.53%, respectively, which was higher than the reference cell fabricated without the CZTS back contact, indicating the capability of CZTS as a back contact in boosting the performance of CdTe PV.</p>

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Solution-processed kesterite Cu2ZnSnS4 back contact layer to enhance the hole collection and transport in CdTe solar cells

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • Vishnu Narayanan V.,
  • K. S. Rajni,
  • Udai P. Singh

摘要

In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the spin coating method, varying the spin cycles, used as a back contact layer for CdTe thin film solar cells in superstrate geometry. X-ray diffraction (XRD) and micro-Raman analysis confirmed the formation of pure kesterite-phase CZTS with a grain size ranging from 14.95 to 16.35 nm with p-type electrical conductivity. The FESEM analysis confirmed the uniform coating of thin films over the substrate, which is supported by the AFM analysis. The oxidation states of Cu, Zn, Sn, and S were confirmed from the XPS analysis. The prepared CZTS shows direct allowed transitions with bandgap energy varying from 1.54 to 1.62 eV. The quantitative analysis of electronic states was carried out using the ultraviolet photoelectron spectroscopy (UPS). The combined results indicated that the CZTS thin films can be utilized as a back contact buffer layer for CdTe photovoltaics (CdTe PV). The FTO/CdS/CdTe/CZTS/Ag structured cell produced a PCE of 8.34% with Voc, Jsc, and FF values of 0.684 V, 22.32 mA/cm2, and 54.53%, respectively, which was higher than the reference cell fabricated without the CZTS back contact, indicating the capability of CZTS as a back contact in boosting the performance of CdTe PV.