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<p>This study investigates the impact of varying hydrochloric acid (HCl) concentrations (0.50&#xa0;M, 0.75&#xa0;M, and 1.0&#xa0;M) on the structural, optical, morphological, and electrical properties of polyaniline (PANI) synthesized via chemical oxidative polymerization. X-ray diffraction (XRD) analysis confirms a transition from amorphous to semi-crystalline phases, with 0.75&#xa0;M HCl producing the most ordered structure. Fourier-transform infrared (FTIR) spectroscopy reveals variations in peak intensity associated with doping levels, highlighting the effects of protonation. UV-Vis spectroscopy shows a redshift in the polaron–π* transition, accompanied by a reduction in bandgap from 1.93&#xa0;eV (0.50&#xa0;M) to 1.87&#xa0;eV (1.0&#xa0;M). Scanning electron microscopy (SEM) images illustrate a morphological evolution from irregular granules (0.50&#xa0;M) to dense, interconnected structures (1.0&#xa0;M), enhancing electrical pathways. Energy-dispersive X-ray spectroscopy (EDS) confirms the expected elemental composition, validating the synthesis approach. Electrical conductivity measurements reveal an increase from 1.5 × 10⁻⁵ S/cm (0.50&#xa0;M) to 5.7 × 10⁻³ S/cm (1.0&#xa0;M), attributed to enhanced charge carrier mobility. Fabricated p-PANI/n-Si diodes demonstrate significant improvements in rectification and photoresponse, with forward current density reaching 3.2&#xa0;mA/cm² under illumination (1.0&#xa0;M HCl). The ideality factor decreases from 21.85 (0.50&#xa0;M) to 15.94 (1.0&#xa0;M) in the dark, and from 18.74 to 14.83 under illumination, indicating improved charge transport. These results emphasize the critical role of doping in tuning PANI’s electronic properties, highlighting its potential for optoelectronic applications.</p>

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Tunable HCl doping for enhanced charge transport and optoelectronic performance in p-PANI/n-Si diodes

  • 期刊论文

  • 发表日期：

    2025年9月26日

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  • G. Pradeesh,
  • R. Mariappan,
  • N. Nithya,
  • M. Aslam Manthrammel,
  • Mohd Shkir,
  • M. Saravanakumar

摘要

This study investigates the impact of varying hydrochloric acid (HCl) concentrations (0.50 M, 0.75 M, and 1.0 M) on the structural, optical, morphological, and electrical properties of polyaniline (PANI) synthesized via chemical oxidative polymerization. X-ray diffraction (XRD) analysis confirms a transition from amorphous to semi-crystalline phases, with 0.75 M HCl producing the most ordered structure. Fourier-transform infrared (FTIR) spectroscopy reveals variations in peak intensity associated with doping levels, highlighting the effects of protonation. UV-Vis spectroscopy shows a redshift in the polaron–π* transition, accompanied by a reduction in bandgap from 1.93 eV (0.50 M) to 1.87 eV (1.0 M). Scanning electron microscopy (SEM) images illustrate a morphological evolution from irregular granules (0.50 M) to dense, interconnected structures (1.0 M), enhancing electrical pathways. Energy-dispersive X-ray spectroscopy (EDS) confirms the expected elemental composition, validating the synthesis approach. Electrical conductivity measurements reveal an increase from 1.5 × 10⁻⁵ S/cm (0.50 M) to 5.7 × 10⁻³ S/cm (1.0 M), attributed to enhanced charge carrier mobility. Fabricated p-PANI/n-Si diodes demonstrate significant improvements in rectification and photoresponse, with forward current density reaching 3.2 mA/cm² under illumination (1.0 M HCl). The ideality factor decreases from 21.85 (0.50 M) to 15.94 (1.0 M) in the dark, and from 18.74 to 14.83 under illumination, indicating improved charge transport. These results emphasize the critical role of doping in tuning PANI’s electronic properties, highlighting its potential for optoelectronic applications.