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<p>The fabrication of RE<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub> (RE = Gd, Er and Ho) (x = 0%, 3% and 6%) films deposited on ITO/glass substrates was achieved through the spin-coating technique. A variety of techniques were used to characterize RE<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub> (RE = Gd, Er and Ho) films. Including XRD, FESEM, AFM, UV-visible spectroscopy, UPS analysis and I–V characteristic. The analysis revealed that all films possess a tetragonal crystal structure with the 14/mmm space group. Upon increasing Zr doping, the grain size was decreased and a uniform surface morphology was observed. In addition, the surface roughness of the films gradually increased. The optical band gap of the films exhibited distinct variations with Zr doping: for Gd<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub>, it decreased from 1.7 to 1.59 eV; for Er<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub> and Ho<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub>, it increased from 1.63 to 2.24 eV and from 1.75 to 1.97 eV, respectively. Electrical measurements of RE<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub> (RE = Gd and Er) (x = 0%, 3% and 6%) films were conducted using I–V characteristic. All films demonstrated ohmic behavior. Notably, Gd<sub>1.94</sub>Zr<sub>0.06</sub>CuO<sub>4</sub> exhibited a low resistivity of 11.9&#xa0;Ω.cm and a high conductivity of 119.05*10<sup>–3</sup>&#xa0;(Ω.cm)<sup>−1</sup>. RE<sub>2-x</sub>Zr<sub>x</sub>CuO<sub>4</sub> (RE = Gd, Er and Ho) (x = 0%, 3% and 6%) films may be valuable candidates for the development of new materials as an absorber layer in solar cell applications.</p>

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Spin coated RE2-xZrxCuO4 (RE = Gd, Er and Ho) (x = 0%, 3% and 6%) thin films for photovoltaic applications: structural, optical and electrical study

  • 期刊论文

  • 发表日期：

    2025年3月12日

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  • Sara Ezairi,
  • Assaad Elouafi,
  • Fatima Lmai,
  • Abdeslam Tizliouine

摘要

The fabrication of RE2-xZrxCuO4 (RE = Gd, Er and Ho) (x = 0%, 3% and 6%) films deposited on ITO/glass substrates was achieved through the spin-coating technique. A variety of techniques were used to characterize RE2-xZrxCuO4 (RE = Gd, Er and Ho) films. Including XRD, FESEM, AFM, UV-visible spectroscopy, UPS analysis and I–V characteristic. The analysis revealed that all films possess a tetragonal crystal structure with the 14/mmm space group. Upon increasing Zr doping, the grain size was decreased and a uniform surface morphology was observed. In addition, the surface roughness of the films gradually increased. The optical band gap of the films exhibited distinct variations with Zr doping: for Gd2-xZrxCuO4, it decreased from 1.7 to 1.59 eV; for Er2-xZrxCuO4 and Ho2-xZrxCuO4, it increased from 1.63 to 2.24 eV and from 1.75 to 1.97 eV, respectively. Electrical measurements of RE2-xZrxCuO4 (RE = Gd and Er) (x = 0%, 3% and 6%) films were conducted using I–V characteristic. All films demonstrated ohmic behavior. Notably, Gd1.94Zr0.06CuO4 exhibited a low resistivity of 11.9 Ω.cm and a high conductivity of 119.05*10–3 (Ω.cm)−1. RE2-xZrxCuO4 (RE = Gd, Er and Ho) (x = 0%, 3% and 6%) films may be valuable candidates for the development of new materials as an absorber layer in solar cell applications.