Scholarlink

<p>Understanding the thermal stability of MXene/SiOC interface is critical for their use in high-temperature applications. In this work, we present a comprehensive in-situ transmission electron microscopy (TEM) study, coupled with thermogravimetric analysis (TGA), and X-ray diffraction (XRD), to investigate the morphological and chemical evolution of Ti₃C₂Tₓ MXene on polymer-derived SiOC ceramic, which was pre-pyrolyzed at 750&#xa0;°C under argon and surface-treated with plasma. From room temperature (RT) to 1000&#xa0;°C, the MXene layers near the SiOC interface began to collapse at ~ 700&#xa0;°C, while the top layers persisted up to 800&#xa0;°C. Loss of –F and –O terminations and diffusion of Ti, C, Si, and O atomic species toward the interface region occurred above 700&#xa0;°C. TGA revealed an initial mass loss of about 5–6 wt% below 300&#xa0;°C, followed by continued high-temperature degradation associated with surface termination loss and interfacial phase transformation. Intense rutile TiO₂ peaks emerge after 1000&#xa0;°C with a transition from layered structures to aggregated bulk particles. These findings provide crucial insights into designing thermally stable MXene/SiOC interfaces.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Temperature-dependent morphological and phase evolution at the MXene/SiOC interface

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月16日

查看全文
  • Mubina Shaik,
  • Tim Pieshkov,
  • Abhijit Biswas,
  • Pulickel M. Ajayan,
  • Kathy Lu

摘要

Understanding the thermal stability of MXene/SiOC interface is critical for their use in high-temperature applications. In this work, we present a comprehensive in-situ transmission electron microscopy (TEM) study, coupled with thermogravimetric analysis (TGA), and X-ray diffraction (XRD), to investigate the morphological and chemical evolution of Ti₃C₂Tₓ MXene on polymer-derived SiOC ceramic, which was pre-pyrolyzed at 750 °C under argon and surface-treated with plasma. From room temperature (RT) to 1000 °C, the MXene layers near the SiOC interface began to collapse at ~ 700 °C, while the top layers persisted up to 800 °C. Loss of –F and –O terminations and diffusion of Ti, C, Si, and O atomic species toward the interface region occurred above 700 °C. TGA revealed an initial mass loss of about 5–6 wt% below 300 °C, followed by continued high-temperature degradation associated with surface termination loss and interfacial phase transformation. Intense rutile TiO₂ peaks emerge after 1000 °C with a transition from layered structures to aggregated bulk particles. These findings provide crucial insights into designing thermally stable MXene/SiOC interfaces.