<p>In today’s semiconductor industry, enhancing Tunnel Field-Effect Transistors (TFETs) device performance is crucial. To address challenges related to ON current, ambipolar conduction, subthreshold slope, and transconductance, we propose a junctionless TFET design based on the charge plasma concept. This design incorporates platinum (5.93 eV) for the source and tungsten (4.7 eV) for the gate, with the device structure divided into the drain-channel region and the source region. Our comprehensive evaluation includes materials from III-V and IV groups, examining various compounds to assess their efficiency, reliability, and robustness within the device. Our findings indicate that germanium (Ge) is the optimal source material, while silicon (Si) and gallium arsenide (GaAs) show promise for the drain-channel region when used in conjunction with Ge. Additionally, we investigate the effects of temperature and interface trap charges on these materials. This involves analyzing various figures of merit (FOM) across a temperature range of 250 K to 400 K and trap charge densities from <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41939_2025_769_Article_IEq1.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="155" /> </InlineMediaObject> <EquationSource Format="TEX">$ N_{f} = \pm 1 \times 10^{12} \, cm^{-2} $</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <msub> <mi>N</mi> <mi>f</mi> </msub> <mo>=</mo> <mo>±</mo> <mn>1</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>12</mn> </msup> <mspace width="0.166667em" /> <mi>c</mi> <msup> <mi>m</mi> <mrow> <mo>-</mo> <mn>2</mn> </mrow> </msup> </mrow> </math></EquationSource> </InlineEquation>. This detailed analysis provides valuable insights into the performance of materials under various conditions. By expanding our focus beyond traditional silicon to include III-V compounds and 2D materials, we anticipate significant advancements in the efficiency of TFETs, particularly for ultra-low-power applications.</p>

Performance and reliability of N-type doping-free TFETs: the role of compound semiconductor materials

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发表日期：

2025年2月20日

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Bandi Venkata Chandan,
Kaushal Kumar Nigam

摘要

In today’s semiconductor industry, enhancing Tunnel Field-Effect Transistors (TFETs) device performance is crucial. To address challenges related to ON current, ambipolar conduction, subthreshold slope, and transconductance, we propose a junctionless TFET design based on the charge plasma concept. This design incorporates platinum (5.93 eV) for the source and tungsten (4.7 eV) for the gate, with the device structure divided into the drain-channel region and the source region. Our comprehensive evaluation includes materials from III-V and IV groups, examining various compounds to assess their efficiency, reliability, and robustness within the device. Our findings indicate that germanium (Ge) is the optimal source material, while silicon (Si) and gallium arsenide (GaAs) show promise for the drain-channel region when used in conjunction with Ge. Additionally, we investigate the effects of temperature and interface trap charges on these materials. This involves analyzing various figures of merit (FOM) across a temperature range of 250 K to 400 K and trap charge densities from $ N_{f} = \pm 1 \times 10^{12} \, cm^{-2} $ $N_{f} = \pm 1 \times 10^{12} c m^{- 2}$ . This detailed analysis provides valuable insights into the performance of materials under various conditions. By expanding our focus beyond traditional silicon to include III-V compounds and 2D materials, we anticipate significant advancements in the efficiency of TFETs, particularly for ultra-low-power applications.