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<p>A high-efficiency biharmonic Class F power amplifier (PA) has been proposed for concurrent multi-band operation at frequencies of 1.84&#xa0;GHz, 2.76&#xa0;GHz, and 3.5&#xa0;GHz. A T-type microstrip matching network at the input of the power transistor is proposed to accurately control the third harmonic in each of the two bands with the proposed dual-band network. The proposed dual-band matching network is capable of wide frequency shifting using the band-switching control method. Therefore, in case of interference in one band with an unwanted signal, the circuit can correct the frequency, which is suitable for radio frequency applications. Excellent results were obtained with the precise control of the third harmonic at the input of the power transistor and the second and third harmonics in both bands at the output of the transistor. Simulation and fabrication results show that the power amplifier has a maximum power added efficiency (PAE) of 81% at 1.84&#xa0;GHz and achieves a saturated output power (Pout) of 41 dBm. At 2.67&#xa0;GHz, the Pout is 38 dBm and the maximum PAE is 44%, and at 3.5&#xa0;GHz, the Pout is 41 dBm and the maximum PAE is 76%. The PA is designed for use in dual-frequency wireless communication systems at 1.84 and 3.5&#xa0;GHz and performs very well in single-band and dual-band simultaneous operation.</p>

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A novel multi-band concurrent high-efficiency biharmonic Class-F power amplifier for WCDMA applications

  • 期刊论文

  • 发表日期：

    2025年4月22日

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  • Abdollah Mohammadi,
  • Shaban Rezaei Borjlu,
  • Bahador Makkiabadi

摘要

A high-efficiency biharmonic Class F power amplifier (PA) has been proposed for concurrent multi-band operation at frequencies of 1.84 GHz, 2.76 GHz, and 3.5 GHz. A T-type microstrip matching network at the input of the power transistor is proposed to accurately control the third harmonic in each of the two bands with the proposed dual-band network. The proposed dual-band matching network is capable of wide frequency shifting using the band-switching control method. Therefore, in case of interference in one band with an unwanted signal, the circuit can correct the frequency, which is suitable for radio frequency applications. Excellent results were obtained with the precise control of the third harmonic at the input of the power transistor and the second and third harmonics in both bands at the output of the transistor. Simulation and fabrication results show that the power amplifier has a maximum power added efficiency (PAE) of 81% at 1.84 GHz and achieves a saturated output power (Pout) of 41 dBm. At 2.67 GHz, the Pout is 38 dBm and the maximum PAE is 44%, and at 3.5 GHz, the Pout is 41 dBm and the maximum PAE is 76%. The PA is designed for use in dual-frequency wireless communication systems at 1.84 and 3.5 GHz and performs very well in single-band and dual-band simultaneous operation.