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<p>In this study, Mn- and Ni-doped MoO<sub>3</sub> thin films were synthesized using a sol–gel spin coating method and evaluated as photoanodes in dye-sensitized solar cells (DSSCs). Structural, morphological, optical, and electrochemical properties of the films were systematically analyzed using XRD, SEM, UV–Vis spectroscopy, and electrochemical impedance spectroscopy (EIS). Doping with Mn and Ni resulted in a reduction in crystallite size, improved optical absorption in the UV–visible range, and enhanced electrical conductivity. The photovoltaic performance of DSSCs incorporating the doped films demonstrated a significant improvement, with power conversion efficiencies increasing from 2.4% for pristine MoO<sub>3</sub> to 3.375% and 5.0% for Mn- and Ni-doped films, respectively. EIS analysis revealed that Ni doping yielded the lowest charge transfer resistance (~ 15 Ω), highlighting its superior catalytic activity and electron transport capabilities. These results underscore the potential of Mn- and Ni-doped MoO<sub>3</sub> thin films in advancing DSSC technologies.</p>

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Enhancing the performance of dye-sensitized solar cells (DSSCs) through Mn and Ni doping of MoO3 thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月24日

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  • Kübra Köşe Kaya,
  • Ceren Orak,
  • Sabit Horoz

摘要

In this study, Mn- and Ni-doped MoO3 thin films were synthesized using a sol–gel spin coating method and evaluated as photoanodes in dye-sensitized solar cells (DSSCs). Structural, morphological, optical, and electrochemical properties of the films were systematically analyzed using XRD, SEM, UV–Vis spectroscopy, and electrochemical impedance spectroscopy (EIS). Doping with Mn and Ni resulted in a reduction in crystallite size, improved optical absorption in the UV–visible range, and enhanced electrical conductivity. The photovoltaic performance of DSSCs incorporating the doped films demonstrated a significant improvement, with power conversion efficiencies increasing from 2.4% for pristine MoO3 to 3.375% and 5.0% for Mn- and Ni-doped films, respectively. EIS analysis revealed that Ni doping yielded the lowest charge transfer resistance (~ 15 Ω), highlighting its superior catalytic activity and electron transport capabilities. These results underscore the potential of Mn- and Ni-doped MoO3 thin films in advancing DSSC technologies.