Purpose <p>X-ray lithography has been widely used for decades to fabricate micro- and nanostructures, particularly those with excellent high-aspect-ratio. The X-ray lithography station at the Beijing Synchrotron Radiation Facility (BSRF) was established in the 1990s and has provided X-ray exposure services for hundreds of users during dedicated synchrotron radiation runs. However, the beam time allocated for two cycles of dedicated synchrotron radiation each year has proven insufficient, and the parasitic mode could not be employed because the X-ray lithography station is located in Hall 13 at BSRF. To mitigate this limitation, a new X-ray lithography station has been constructed in Hall 15 to accommodate beam time for both dedicated and parasitic modes.</p> Method <p>The beam from the bending magnet can be directed through a beryllium window into the exposure cavity for deep X-ray lithography. Additionally, the beam can be reflected by a mirror to an alternate exposure cavity for nano X-ray lithography. A sample scanning system has been implemented to increase the exposure area.</p> Results and conclusion <p>The new X-ray lithography station has been established at beamline 1B3A in Hall 15 at BSRF, providing both deep and nano X-ray lithography services to users during dedicated and parasitic modes. Microstructures with a high-aspect-ratio of up to 100 have been fabricated using deep X-ray lithography.</p>

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The new X-ray lithography station at Beijing synchrotron radiation facility

  • Bo Wang,
  • Tian-Chong Zhang,
  • Jing Liu,
  • Yao-Wu Zhang,
  • Hong Shi

摘要

Purpose

X-ray lithography has been widely used for decades to fabricate micro- and nanostructures, particularly those with excellent high-aspect-ratio. The X-ray lithography station at the Beijing Synchrotron Radiation Facility (BSRF) was established in the 1990s and has provided X-ray exposure services for hundreds of users during dedicated synchrotron radiation runs. However, the beam time allocated for two cycles of dedicated synchrotron radiation each year has proven insufficient, and the parasitic mode could not be employed because the X-ray lithography station is located in Hall 13 at BSRF. To mitigate this limitation, a new X-ray lithography station has been constructed in Hall 15 to accommodate beam time for both dedicated and parasitic modes.

Method

The beam from the bending magnet can be directed through a beryllium window into the exposure cavity for deep X-ray lithography. Additionally, the beam can be reflected by a mirror to an alternate exposure cavity for nano X-ray lithography. A sample scanning system has been implemented to increase the exposure area.

Results and conclusion

The new X-ray lithography station has been established at beamline 1B3A in Hall 15 at BSRF, providing both deep and nano X-ray lithography services to users during dedicated and parasitic modes. Microstructures with a high-aspect-ratio of up to 100 have been fabricated using deep X-ray lithography.